IDWD30G120C5XKSA1

Single Diodes Overview

The IDWD30G120C5 is a CoolSiC™ 1200 V Schottky diode from Infineon Technologies, utilizing .XT interconnection technology for enhanced thermal performance. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 30 A at a case temperature of 150 °C. The device operates with a junction temperature range up to 175 °C and exhibits low forward voltage characteristics. Key electrical parameters include a typical forward voltage of 1.45 V at 30 A and 25 °C, and a dv/dt ruggedness of 150 V/ns.

Single Diodes Feature Summary

• Eliminates reverse recovery current and forward recovery effects
• Provides high surge current capability with robust avalanche energy handling
• Ensures temperature-independent switching behavior across operating ranges
• Integrates .XT interconnection technology for superior thermal dissipation

Single Diodes Applications

• String inverters
• Online UPS and industrial UPS systems
• Electric vehicle charging infrastructure
• Welding equipment

Single Diodes Procurement Notes

Verify component authenticity through authorized Infineon channels. Confirm package marking D3012C5 matches the PG-TO247-2-U01 outline. Ensure storage and soldering conditions adhere to specified limits: wave soldering at 260 °C for 10 seconds and mounting torque of 0.6 Nm. Validate that applications comply with JEDEC qualification standards for industrial use.

Single Diodes Selection Notes

Select this component for high-frequency switching applications requiring minimal reverse recovery losses. The 1200 V rating suits medium-voltage power conversion topologies. Consider the 175 °C junction limit for high-temperature environments. Evaluate thermal resistance values against heatsink designs to maintain safe operating areas under continuous load conditions.

Single Diodes Part Context

This part belongs to the Infineon CoolSiC™ Gen5 family of silicon carbide Schottky diodes. It replaces previous generations by offering improved thermal management via .XT technology. The PG-TO247-2-U01 package provides a standardized footprint for easy integration into existing power electronics designs while enhancing heat transfer efficiency compared to standard variants.

Single Diodes Replacement Considerations

Direct substitutes within the same generation require matching voltage and current ratings. Verify pin compatibility and thermal resistance specifications when cross-referencing with older G4 or G3 models. Ensure any alternative maintains the required dv/dt ruggedness and reverse leakage characteristics for the specific circuit topology.