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Product Detailed Parameters
- Description：JFET N-Channel -20V Low Ciss
- Series：IF140
- Mfr：InterFET
- Package：Strip
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：20 V
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 5 nA
- Input Capacitance (Ciss) (Max) @ Vds：1.8pF @ 15V
- Resistance - RDS(On)：220 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The InterFET IF140AST3 is an N-Channel Junction Field-Effect Transistor (JFET) utilizing the proprietary N0014L geometry. It operates in a depletion mode within a surface-mount SOT-23 package. Key electrical characteristics include a gate-to-source breakdown voltage of -20V, a forward transconductance of 3.5mS, and a drain-to-source saturation current ranging from 5mA to 15mA. The device exhibits low input capacitance of 3pF and typical noise performance of 3nV/√Hz at 10Hz.
Feature Summary
- Utilizes InterFET N0014L geometry for industry-leading low gate leakage and high radiation tolerance
- Optimized for low-noise, higher-frequency designs with minimal input capacitance
- Provides flexible packaging options including Surface Mount Technology (SMT), Through-Hole, and bare die configurations
Applications
- Medical imaging systems and ultrasound equipment
- Radar and satellite communications
- Low-noise amplifiers and signal mixers
- Hydrophone preamplifiers and missile guidance systems
Procurement Notes
Verify the specific suffix 'ST3' confirms the SOT-23 surface mount package configuration. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors. Ensure proper ESD handling protocols are followed during storage and assembly due to the sensitivity of the junction field-effect structure.
Selection Notes
Select the IF140AST3 when low gate leakage and high radiation tolerance are critical design parameters. Compare against standard JFETs if superior noise figures or lower input capacitance are required for high-frequency applications. Consider the thermal derating specifications for the SOT-23 package when designing power dissipation limits.
Part Context
The IF140AST3 belongs to the IF140 family of N-Channel JFETs manufactured by InterFET. This series is engineered specifically for demanding environments requiring high reliability and low noise performance. The component serves as a specialized discrete semiconductor solution for analog signal processing tasks.
Replacement Considerations
Officially documented cross-references include MMBF4416, BF512, SST4416, and J304. Verify pinout compatibility and electrical parameter margins before substituting these industry-standard equivalents in existing circuit designs.
FAQ
What is the maximum operating junction temperature for the IF140AST3?
The maximum operating junction temperature for the IF140AST3 in the SOT-23 package is 150°C.
Are the source and drain pins interchangeable on the IF140AST3?
Yes, the datasheet specifies that the Source and Drain (S/D) pins are interchangeable.
What is the typical gate leakage current for this component?
The typical gate leakage current is 100fA at 10V.
