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The InterFET IF140ST3TR is an N-Channel Junction Field-Effect Transistor (JFET) utilizing the proprietary N0014L geometry. It operates in a depletion mode with a maximum gate-to-source breakdown voltage of -20V and a continuous power dissipation of 350mW in the SOT-23 package. Key electrical parameters include a typical drain-to-source saturation current (IDSS) of 10mA, a forward transconductance (GFS) of 3.5mS, and a gate leakage current as low as 100fA at 25°C. The device features a typical input capacitance of 3pF and equivalent circuit input noise voltage of 3nV/√Hz at 10Hz.
Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Confirm that the requested quantity aligns with the minimum order requirements associated with the reel size. Ensure compliance with RoHS and REACH standards if required by the end application. Validate the component authenticity through authorized distribution channels before integration into the design.
Select this component when low gate leakage and high radiation tolerance are critical design constraints. Compare the -20V breakdown rating against the system's maximum operating voltages to ensure adequate safety margins. Evaluate the 3.5mS transconductance against the required gain specifications for the intended amplifier or switch topology.
This part belongs to the IF140 family of mid-gain JFETs designed for low-noise applications. It serves as a surface-mount alternative to through-hole variants like the TO-72 packaged IF140T72. The ST3TR designation specifically indicates the SOT-23 package format supplied in a tape and reel configuration for automated assembly processes.
Publicly documented industry standard cross-references include the BF512, SST4416, MMBF4416, and J211. Verify pinout compatibility and exact electrical parameter overlaps before substituting. Note that source and drain pins are interchangeable on this device, which may simplify layout replacements.