IF140ST3TR

IF140ST3TR

$1.07
  • Description:JFET N-Channel -20V Low Ciss
  • Series:IF140

SKU:4a4ffd4e9bc4 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-Channel -20V Low Ciss
  • Series:IF140
  • Mfr:InterFET
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):20 V
  • Current - Drain (Idss) @ Vds (Vgs=0):4 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:2 V @ 5 nA
  • Input Capacitance (Ciss) (Max) @ Vds:1.8pF @ 15V
  • Resistance - RDS(On):300 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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IF140ST3TR

Overview

The InterFET IF140ST3TR is an N-Channel Junction Field-Effect Transistor (JFET) utilizing the proprietary N0014L geometry. It operates in a depletion mode with a maximum gate-to-source breakdown voltage of -20V and a continuous power dissipation of 350mW in the SOT-23 package. Key electrical parameters include a typical drain-to-source saturation current (IDSS) of 10mA, a forward transconductance (GFS) of 3.5mS, and a gate leakage current as low as 100fA at 25°C. The device features a typical input capacitance of 3pF and equivalent circuit input noise voltage of 3nV/√Hz at 10Hz.

Feature Summary

  • Ultra-low gate leakage characteristics suitable for high-impedance circuits
  • High radiation tolerance for demanding environments
  • Low input capacitance and noise voltage for high-frequency signal integrity

Applications

  • Medical imaging systems and ultrasound equipment
  • Radar and satellite communications
  • Hydrophone preamplifiers
  • Precision audio filters and tone control circuits

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Confirm that the requested quantity aligns with the minimum order requirements associated with the reel size. Ensure compliance with RoHS and REACH standards if required by the end application. Validate the component authenticity through authorized distribution channels before integration into the design.

Selection Notes

Select this component when low gate leakage and high radiation tolerance are critical design constraints. Compare the -20V breakdown rating against the system's maximum operating voltages to ensure adequate safety margins. Evaluate the 3.5mS transconductance against the required gain specifications for the intended amplifier or switch topology.

Part Context

This part belongs to the IF140 family of mid-gain JFETs designed for low-noise applications. It serves as a surface-mount alternative to through-hole variants like the TO-72 packaged IF140T72. The ST3TR designation specifically indicates the SOT-23 package format supplied in a tape and reel configuration for automated assembly processes.

Replacement Considerations

Publicly documented industry standard cross-references include the BF512, SST4416, MMBF4416, and J211. Verify pinout compatibility and exact electrical parameter overlaps before substituting. Note that source and drain pins are interchangeable on this device, which may simplify layout replacements.

IF140ST3TRIF140ST3TR
$1.07
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