IF170AST3TR

Overview

The IF170AST3TR is an N-Channel JFET from the IF170A series, manufactured by InterFET. It utilizes InterFET N0132L geometry and is housed in a surface-mount SOT-23 package. The device features a gate-to-source breakdown voltage of -30V and a typical transconductance of 22mS. Key electrical parameters include a typical noise voltage of 1.0 nV/√Hz at 1kHz, a maximum gate leakage current of -0.1nA at VGS = -10V, and a typical forward transconductance of 14mS. The continuous power dissipation for the SOT-23 package is rated at 350mW.

Feature Summary

• Utilizes InterFET N0132L geometry for high radiation tolerance
• Provides low noise performance with a typical value of 1.0 nV/√Hz
• Features extremely low gate leakage current of 750fA typical at 10V
• Offers high gain characteristics with a typical transconductance of 22mS

Applications

• Radar systems and military communications equipment
• Satellite and missile guidance subsystems
• Hydrophone preamplifiers and medical imaging systems
• General-purpose amplifiers, oscillators, and signal mixers

Procurement Notes

Verify the specific binning grade (IF170A) required for your design, as the IF170x series includes multiple variants with different saturation current ranges. Confirm that the SOT-23 tape and reel packaging meets your automated assembly line specifications. Ensure compliance with RoHS, REACH, and CMR standards if applicable to your region. Check for custom test options if tighter parameter tolerances are necessary for your application.

Selection Notes

Select the IF170AST3TR when low noise and high radiation tolerance are critical for mid-frequency amplifier stages. Compare the -30V breakdown rating against your circuit's maximum operating voltages. Consider the IF389x dual matched option if balanced differential pairs are needed. Evaluate the SOT-23 package thermal limits against your expected power dissipation requirements.

Part Context

The IF170AST3TR belongs to the IF170A-B-C-D family of N-Channel JFETs designed for sensitive amplifier applications. This series is engineered using proprietary InterFET N0132L geometry to ensure robust performance in harsh environments. The 'A' suffix denotes a specific binning category for drain-to-source saturation current, distinguishing it from B, C, and D variants within the same product line.

Replacement Considerations

Publicly documented industry standard cross-references include the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, MMBF4393, NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and electrical parameter overlaps before substitution.