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Product Detailed Parameters
- Description：JFET N-Channel -30V Low Noise
- Series：IF170
- Mfr：InterFET
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 10V
- Resistance - RDS(On)：50 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The InterFET IF170BST3TR is an N-Channel Junction Field Effect Transistor (JFET) utilizing the proprietary InterFET N0132L geometry. It operates within a -30V breakdown voltage range and is housed in a surface-mount SOT-23 package. The device features a typical forward transconductance of 6 mS at VDS=15V, ID=1mA, with a minimum specification of 14 mS under different conditions. Key electrical parameters include a gate-to-source reverse current of -0.1 nA maximum, a cutoff voltage between -0.2V and -2.0V, and a saturation current ranging from 6.0 mA to 12.0 mA. Continuous power dissipation is rated at 350 mW.
Feature Summary
- Utilizes InterFET N0132L geometry for high radiation tolerance
- Provides low noise performance with a typical input voltage noise of 1.0 nV/√Hz
- Features extremely low gate leakage current of 750 fA typical at 10V
- Compliant with RoHS, REACH, and CMR standards
Applications
- General amplifiers and oscillators
- Military radar and satellite communications systems
- Medical imaging and ultrasound equipment
- Audio tone control circuits and headphone amplifiers
Procurement Notes
Verify the specific binning code 'B' against design requirements, as it dictates the precise ranges for IDSS and VGS(OFF). Confirm that the tape and reel packaging meets the handling specifications of the assembly line. Ensure the ordering suffix matches the required quantity per reel configuration provided by the manufacturer.
Selection Notes
Select this component when low noise and high radiation hardness are critical for mid-frequency amplifier stages. Compare the -30V rating against circuit voltage headroom needs. Consider the IF170AST3TR or IF170CST3TR if different saturation current bins are required for the specific application gain targets.
Part Context
This part belongs to the IF170A-B-C-D series, which shares identical physical dimensions and basic electrical limits but varies in performance binning. The 'B' designation specifically identifies the manufacturing bin for the IF170BST3 variant within the broader family of N-channel JFETs offered by InterFET.
Replacement Considerations
Publicly documented industry standard cross-references include the 2SK152, 2SK170, 2N6451, 2N6452, 2N3972, and MMBF4393. Equivalent parts from other manufacturers listed are NSVJ3557SA3, NSVJ5908DSG5, and NSVJ2394SA3. Verify pinout compatibility and parameter tolerances before substitution.
