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The IFF300B17N2E4P_B11 is a MIPAQbase module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It has a collector-emitter voltage (VCES) of 1700 V, nominal continuous DC collector current (IC nom) of 300 A at TC=85°C, and a repetitive peak collector current (ICRM) of 600 A. The typical saturation voltage (VCEsat) is 1.95 V at Tvj=25°C. Total power dissipation is 1500 W. Thermal resistance from junction to case is 0.10 K/W for the IGBT and 0.235 K/W for the diode. An integrated NTC thermistor with a rated resistance of 5.00 kΩ at 25°C is included.
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical housing variations or specific qualification grades. Confirm RoHS compliance status and UL approval details directly with the manufacturer before procurement.
Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Ensure gate drive circuits support the recommended ±15 V operating range and internal gate resistor specifications for optimal switching performance.
This component belongs to the Infineon IGBT4 family utilizing trench and fieldstop technology. It is designed for high-power industrial applications requiring robust short-circuit capability and extended operation temperatures up to 150°C.
Consult official Infineon cross-reference lists for verified substitutes. Verify electrical parameters and pinout compatibility before considering alternative part numbers.