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The IFF600B12ME4PB11BPSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features an integrated emitter-controlled diode and a current sense shunt within the EconoDUAL™3 package. The device supports a collector-emitter voltage of 1200 V with a nominal continuous DC collector current of 600 A and a repetitive peak current of 1200 A. Key electrical parameters include a typical saturation voltage of 1.75 V at 25°C and a forward voltage of 1.80 V for the diode. The module incorporates PressFIT contact technology, pre-applied thermal interface material, and an NTC thermistor for thermal monitoring.
Verify the exact ordering suffix against official documentation before procurement. Ordering codes ending in BPSA1 may indicate specific internal revisions or packaging variations that do not alter the core electrical function but require confirmation via the manufacturer's latest datasheet. Ensure compatibility with recommended gate drivers listed on the official Infineon website.
Select this component for applications requiring high power density and integrated current sensing capabilities. The module is designed for industrial environments and meets relevant qualification tests according to IEC standards. Consider the operating temperature range up to 150°C and the positive temperature coefficient of the saturation voltage when designing the thermal management system.
This module belongs to the EconoDUAL™3 series, which utilizes Trench/Fieldstop IGBT4 technology. The series is characterized by low switching losses and high reliability. The inclusion of a current sense shunt distinguishes it from standard half-bridge modules, providing additional diagnostic functionality for advanced control strategies.
IFF600B12ME4P_B11
The maximum repetitive peak collector current (ICRM) is 1200 A.
Yes, the module includes an integrated NTC thermistor for thermal monitoring.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.