IFN160CST3TR

IFN160CST3TR

$0.37
  • Description:JFET N-Channel -50V Low Ciss
  • Series:IFN160

SKU:3534d903f1cd Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-Channel -50V Low Ciss
  • Series:IFN160
  • Mfr:InterFET
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):50 V
  • Current - Drain (Idss) @ Vds (Vgs=0):6 mA @ 5 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:1.3 V @ 10 µA
  • Input Capacitance (Ciss) (Max) @ Vds:4pF @ 10V
  • Resistance - RDS(On):290 Ohms
  • Power - Max:350 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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IFN160CST3TR

Overview

The InterFET IFN160CST3TR is an N-channel JFET in a surface-mount SOT-23 package. It features a gate-to-source breakdown voltage of -75V and a typical gate leakage current of 100pA at -30V. The device exhibits a drain-to-source saturation current range of 2mA to 6mA, with a forward transconductance of 1500µS. Input capacitance is typically 4pF, and reverse transfer capacitance is 1pF. Continuous power dissipation reaches 350mW, with an operating junction temperature range from -55°C to 150°C.

Feature Summary

  • Utilizes InterFET N107A geometry for high radiation tolerance
  • Provides low input capacitance and low cutoff voltage characteristics
  • Supports surface mount and bare die packaging options
  • Compliant with RoHS, REACH, and CMR standards

Applications

  • Audio tone control circuits and microphone impedance transformation
  • Medical imaging systems and ultrasound equipment
  • Radar and communication systems in military/aerospace contexts
  • High impedance switches and signal mixers

Procurement Notes

Verify the specific binning grade (IFN160C) against design requirements before ordering. Confirm tape and reel specifications, such as piece count limits for 7-inch or 13-inch reels, match production needs. Ensure ESD handling protocols are followed during storage and assembly due to the sensitivity of the JFET structure.

Selection Notes

Select the IFN160C variant when higher drain-to-source saturation currents between 2mA and 6mA are required compared to other grades. Verify that the SOT-23 thermal dissipation capabilities meet the application's power constraints. Consider the interchangeable source and drain pins for flexible PCB layout designs.

Part Context

This component belongs to the IFN160A-B-C series, which shares identical electrical parameters but differs in manufacturing bins. The 'C' suffix denotes a specific saturation current bin. Other variants include IFN160AST3 and IFN160BST3. The series serves as a direct cross-reference for industry-standard parts like the 2SK160.

Replacement Considerations

Publicly documented equivalents include the 2SK160, BF510, BF511, J305, and MMBFJ202. Similar InterFET parts include the 2N4339, 2N4340, and SMP4339. Verify pinout compatibility and exact parameter ranges before substituting.

IFN160CST3TRIFN160CST3TR
$0.37
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