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The InterFET IFN160CST3TR is an N-channel JFET in a surface-mount SOT-23 package. It features a gate-to-source breakdown voltage of -75V and a typical gate leakage current of 100pA at -30V. The device exhibits a drain-to-source saturation current range of 2mA to 6mA, with a forward transconductance of 1500µS. Input capacitance is typically 4pF, and reverse transfer capacitance is 1pF. Continuous power dissipation reaches 350mW, with an operating junction temperature range from -55°C to 150°C.
Verify the specific binning grade (IFN160C) against design requirements before ordering. Confirm tape and reel specifications, such as piece count limits for 7-inch or 13-inch reels, match production needs. Ensure ESD handling protocols are followed during storage and assembly due to the sensitivity of the JFET structure.
Select the IFN160C variant when higher drain-to-source saturation currents between 2mA and 6mA are required compared to other grades. Verify that the SOT-23 thermal dissipation capabilities meet the application's power constraints. Consider the interchangeable source and drain pins for flexible PCB layout designs.
This component belongs to the IFN160A-B-C series, which shares identical electrical parameters but differs in manufacturing bins. The 'C' suffix denotes a specific saturation current bin. Other variants include IFN160AST3 and IFN160BST3. The series serves as a direct cross-reference for industry-standard parts like the 2SK160.
Publicly documented equivalents include the 2SK160, BF510, BF511, J305, and MMBFJ202. Similar InterFET parts include the 2N4339, 2N4340, and SMP4339. Verify pinout compatibility and exact parameter ranges before substituting.