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Product Detailed Parameters
- Description：IGBT MOD 1200V 200A 515W
- Series：MIPAQ™
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：515 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：6.3 nF @ 25 V
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Overview
The IFS100B12N3E4_B31 is a MIPAQ base module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled HE diode with an integrated current sense shunt. It provides a collector-emitter voltage (VCES) of 1200 V, a nominal continuous DC collector current (IC nom) of 100 A at TC = 95°C, and a repetitive peak collector current (ICRM) of 200 A. The typical collector-emitter saturation voltage (VCEsat) is 1.75 V at Tvj = 25°C. Total power dissipation reaches 515 W at TC = 25°C. The module includes an NTC thermistor rated at 5 kΩ at 25°C and supports a maximum junction temperature of 175°C.
Feature Summary
- Integrated current sense shunt for monitoring
- High power and thermal cycling capability
- Isolated copper base plate
Applications
- Motor drives
- Servo drives
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm mechanical variations or specific package configurations. Ensure that any additional alphanumeric characters appended to the base model number are explicitly documented as functional or physical differentiators before procurement. Cross-reference the requested part number with the latest datasheet revision to avoid discrepancies in technical specifications.
Selection Notes
Select this component based on its 1200 V rating and 100 A continuous current capacity suitable for industrial motor control applications. Consider the low switching losses and high thermal cycling capability when designing for efficiency and reliability. Verify that the system's gate drive requirements align with the specified internal gate resistance and threshold voltages for optimal performance.
Part Context
This module belongs to the Infineon MIPAQ base series utilizing Trenchstop IGBT4 technology. It integrates an emitter-controlled fast recovery diode and a precision current sense shunt within a standard housing. The design emphasizes robust thermal management through an isolated copper base plate, making it suitable for demanding industrial power conversion environments.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 1200 V rating, 100 A current class, and EconoPACK/MIPAQ form factor. Verify pinout compatibility and thermal characteristics before substitution.
