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The IFS100B17N3E4PB11BPSA1 is a silicon-based IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It utilizes the MIPAQ ~ PressFIT package topology and features a sixpack configuration. The device is rated for a maximum collector-emitter voltage of 1700 V and supports a continuous collector current of 100 A at 25°C. Typical saturation voltages are specified as 1.95 V for the IGBT and 1.8 V for the integrated diode at a junction temperature of 25°C. The module operates within a temperature range of -40°C to +150°C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific ordering suffix matches the required technical specifications. Request official datasheets and compliance documentation prior to integration. Ensure supply chain stability given potential limited availability status associated with this part number.
Select this module for applications requiring 1700 V blocking capability and 100 A continuous current handling. The press-fit termination method eliminates soldering requirements, reducing assembly stress. Verify thermal interface material compatibility with the MIPAQ footprint. Consider the positive temperature coefficient characteristics inherent to the Trenchstop technology for safe parallel operation if higher currents are needed.
This component is part of Infineon's EconoPACK and MIPAQ family, designed for high-density power conversion. It represents the Trenchstop IGBT4 generation, offering improved switching performance compared to previous iterations. The B11 suffix typically denotes specific internal testing or traceability codes defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source data. Engineering changes should be validated against mechanical dimensions and electrical parameters using official replacement guides.