SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IFS150B12N3E4_B31 is a MIPAQ base module featuring Trench/Fieldstop IGBT4 technology with an emitter-controlled diode and integrated current sense shunt. It provides a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 150 A at 90°C case temperature, and a repetitive peak current of 300 A. The typical saturation voltage is 1.75 V at 25°C, rising to 2.05 V at 150°C. Operating junction temperatures range from -40°C to 150°C under switching conditions. The module includes an NTC thermistor rated at 5 kΩ and utilizes a copper base plate for thermal management.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical pinout and terminal configuration. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration. Confirm that the preliminary datasheet status aligns with final production requirements for your specific design lifecycle.
Select this component when high thermal cycling endurance and integrated current sensing are required in a standard housing. Evaluate the 150 A continuous current rating against your maximum operating temperature and heatsink capabilities. Consider the low stray inductance of 20 nH for applications sensitive to switching overvoltages and fast transient responses.
This part belongs to the Infineon MIPAQ base series utilizing Trenchstop IGBT4-E4 technology. It is designed for industrial power conversion applications requiring robust performance. The module integrates six IGBTs and six diodes in a six-pack topology, providing a compact solution for three-phase inverter bridges.
Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 1200 V rating, 150 A current capacity, and EconoPACK/MIPAQ mechanical dimensions. Verify electrical characteristics and thermal resistance values to ensure equivalent performance in the target application.