IGB01N120H2ATMA1

Description：IGBT 1200V 3.2A TO263-3-2
Series：-

SKU:77e82c68c45d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 3.2A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：3.2 A
Current - Collector Pulsed (Icm)：3.5 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 1A
Power - Max：28 W
Switching Energy：140µJ
Input Type：Standard
Gate Charge：8.6 nC
Td (on/off) @ 25°C：13ns/370ns
Test Condition：800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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IGB01N120H2ATMA1

Overview

The IGB01N120H2ATMA1 is a CoolMOS™ H2 N-channel power MOSFET manufactured by Infineon Technologies. It features a PG-TO263-3 package with a maximum drain-source voltage of 1200 V and a continuous drain current of 1 A at 25 °C. The device exhibits a typical on-state resistance of 480 Ω. It is qualified according to JEDEC standards, passing High Temperature Reverse Bias (HTRB), High Temperature Gate Stress (HTGS), and Intermittent Operation Life tests under specified conditions.

Feature Summary

Utilizes CoolMOS™ H2 technology for optimized switching performance
Qualified according to JEDEC reliability standards
Designed for surface-mount applications in the PG-TO263-3 package

Applications

High-voltage power conversion circuits
Industrial motor control systems
Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific ordering suffix ATMA1 to ensure correct packaging configuration. Confirm that the application environment does not require AEC-Q100 qualification, as this product is explicitly noted as not qualified under automotive electronics council standards. Ensure technical suitability assessment is completed prior to integration.

Selection Notes

Select this component for high-voltage applications requiring robust reliability under JEDEC standards. Consider the 1200 V rating and low current capacity when designing circuits. Evaluate thermal management requirements given the PG-TO263-3 package constraints and the specific on-resistance characteristics provided in the datasheet.

Part Context

This part belongs to the Infineon CoolMOS™ H2 family, designed for high-voltage power switching. The IGB01N120H2 variant specifically targets applications needing 1200 V blocking capability with moderate current handling. The ATMA1 suffix indicates tape-and-reel packaging suitable for automated assembly processes.