SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IGB30N60TATMA1 is a single N-channel Insulated Gate Bipolar Transistor from Infineon's TRENCHSTOP™ series, utilizing Fieldstop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 45 A at 25°C case temperature. The device operates with a maximum junction temperature of 175°C and includes an integrated gate resistor of 0 Ω. Packaged in a PG-TO263-3 (D2PAK) surface-mount housing, it offers low saturation voltage and high ruggedness for efficient power switching.
Verify the specific ordering suffix ATMA1 against official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets RoHS compliance and Pb-free lead plating requirements for your assembly process. Cross-reference the marking code G30T60 on the package to validate authenticity and part identity before integration.
Select this component for applications requiring robust performance in household appliance motor drives. The 600V rating and 45A current capacity suit medium-power inverter designs. Consider the 175°C maximum junction temperature for high-temperature environments. The integrated gate resistance simplifies driver design while maintaining controlled switching speeds.
This device belongs to the TRENCHSTOP™ Series, designed for 600V applications. It represents a low-loss IGBT solution combining trench gate and fieldstop technologies. The series emphasizes high ruggedness and temperature-stable behavior, making it suitable for demanding consumer electronics power stages where efficiency and reliability are critical.
Public confirmed substitute part numbers: IGB30N60T
The maximum short circuit withstand time is 5 µs when VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.
Yes, the IGB30N60TATMA1 has an integrated gate resistor (RGint) of 0 Ω.
The typical collector-emitter saturation voltage (VCE(sat)) is 1.5 V at Tj = 25°C and IC = 30 A.