IGB50N60TATMA1

Overview

The IGB50N60TATMA1 is a single N-channel Insulated Gate Bipolar Transistor from Infineon's TRENCHSTOP series, utilizing Fieldstop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 90 A at 25°C case temperature. The typical saturation voltage is 1.5 V at 50 A. Power dissipation reaches 333 W with a thermal resistance of 0.45 K/W. Operating junction temperature spans -40°C to +175°C. It includes an integrated gate resistor and short-circuit withstand capability of 5 µs.

Feature Summary

• Utilizes TRENCHSTOP and Fieldstop technology for low loss and high ruggedness.
• Features very tight parameter distribution and positive temperature coefficient in saturation voltage.
• Provides high switching speed with low EMI and low gate charge characteristics.
• Includes integrated gate resistor and qualified according to JEDEC standards.

Applications

• Frequency inverters for washing machines
• Fan drives
• Pump systems
• Vacuum cleaners

Procurement Notes

Verify the specific ordering suffix ATMA1 against official documentation to confirm reel packaging and RoHS compliance status. Ensure the component matches the PG-TO263-3 package outline and pin configuration before integration. Cross-reference the datasheet revision to validate electrical parameters and thermal characteristics for your specific operating conditions.

Selection Notes

Select this component for applications requiring robust performance in household appliance motor drives. The 600V rating and 90A current capacity suit medium-power inverter designs. Consider the 0.45 K/W thermal resistance for heatsink requirements. Verify that the 5µs short-circuit withstand time aligns with your protection circuitry capabilities.

Part Context

This device belongs to the TRENCHSTOP™ Series p, representing Infineon's low-loss IGBT technology. It is designed specifically for 600V applications where high switching speed and temperature stability are critical. The part is manufactured using silicon technology and is compliant with RoHS directives.

Replacement Considerations

Public confirmed substitute part numbers: IGB50N60T (standard tube packaging variant).

FAQ

What is the maximum short-circuit withstand time?

The maximum short-circuit withstand time is 5 µs under conditions of VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.

Does the device have an internal gate resistor?

Yes, the IGB50N60TATMA1 includes an integrated gate resistor.

What is the typical saturation voltage at 25°C?

The typical collector-emitter saturation voltage is 1.5 V when measured at IC = 50 A and VGE = 15 V.