IGC07T120T8LX1SA2

Overview

The IGC07T120T8LX1SA2 is a single IGBT bare die from Infineon Technologies, utilizing Trench Field Stop technology. It features a maximum collector-emitter breakdown voltage of 1200 V and a pulsed collector current rating of 4 A. The device operates within a junction temperature range of -40 °C to 175 °C. Packaged as a sawn die on foil in bulk, it is designed for high-power applications requiring robust semiconductor performance.

Feature Summary

• Utilizes Trench Field Stop technology for efficient power switching
• High voltage capability with 1200 V collector-emitter breakdown
• Operates at elevated temperatures up to 175 °C
• Supplied as a bare die on foil for custom module integration

Applications

• Industrial motor drives
• Power supply units
• Inverter systems

Procurement Notes

Verify the specific ordering suffix X1SA2 against official Infineon documentation to confirm availability status, as this variant may be discontinued or subject to change. Ensure compatibility with existing thermal management and mounting processes for bare die components before procurement.

Selection Notes

Select this component for designs requiring a 1200 V rated IGBT die with Trench Field Stop architecture. Consider the 4 A pulsed current limit and 175 °C operating temperature when designing thermal solutions. Verify that the bare die format aligns with the target assembly capabilities.

Part Context

This part belongs to Infineon's discrete IGBT family, specifically the Trench Field Stop series. These components are engineered for high-efficiency power conversion, offering improved switching characteristics compared to standard planar technologies, suitable for demanding industrial and automotive environments.

Replacement Considerations

Check official Infineon substitution lists for direct replacements. Generic IGBT dies with similar voltage and current ratings may serve as alternatives if pinout and thermal interface specifications match.