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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STOP 1200V DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.42V @ 15V, 15A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The IGC18T120T8Q is a bare die trench field-stop IGBT from the TRENCHSTOPTM IGBT4 High Speed family. It features a collector-emitter voltage rating of 1200 V and a nominal DC collector current of 15 A at a case temperature of 100°C. The chip measures 4.16 mm by 4.34 mm with a thickness of 115 µm. Key electrical characteristics include a maximum collector-emitter saturation voltage of 2.42 V at 15 A and 25°C, and a gate-emitter threshold voltage ranging from 5.3 V to 6.3 V. The device supports a virtual junction operating temperature range from -40°C to +175°C.
Feature Summary
- Utilizes trench and field stop technology for low switching losses.
- Features a positive temperature coefficient for easy paralleling.
- Designed as a bare die component for discrete assembly.
Applications
- High frequency drives
- Uninterruptible power supplies
- Welding equipment
- Solar inverters
Procurement Notes
Verify that the procurement channel provides original Infineon packaging compliant with moisture sensitivity levels. Confirm the specific lot date code against the datasheet revision history. Ensure storage conditions adhere to the specified ambient atmosphere and temperature limits before opening sealed bags. Validate that the receiving inspection includes visual checks according to the defined failure catalogue criteria.
Selection Notes
Select this component when designing high-frequency power conversion circuits requiring low switching losses. The bare die format necessitates custom module design or discrete mounting solutions. Evaluate thermal management strategies carefully, as switching characteristics depend heavily on the final assembly technology. Consider the 15 A nominal current rating relative to the intended case temperature constraints.
Part Context
This part belongs to the TRENCHSTOPTM IGBT4 High Speed family, which balances switching and conduction losses for frequencies between 25 kHz and 70 kHz. Unlike packaged modules, this bare die requires integration into a customer-defined substrate or package. It is explicitly noted as not qualified according to AEC Q100 or AEC Q101 automotive standards.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
Is the IGC18T120T8Q suitable for automotive applications?
No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
What is the short circuit withstand time for this chip?
The short circuit data specifies a withstand time of 10 µs under conditions of VGE=15V, VCC=800V, and Tvj=150°C.
How does the positive temperature coefficient benefit the design?
It facilitates easy paralleling of multiple chips without the risk of thermal runaway.
