IGC36T120T8LX1SA1

IGC36T120T8LX1SA1

  • Description:IGBT TRENCH FIELD STOP 1200V DIE
  • Series:TrenchStop™

SKU:361aadba6822 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FIELD STOP 1200V DIE
  • Series:TrenchStop™
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):105 A
  • Vce(on) (Max) @ Vge, Ic:2.07V @ 15V, 35A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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IGC36T120T8LX1SA1

Overview

IGC36T120T8LX1SA1 is a 1200V, 36A N-channel trench IGBT from Infineon's CoolMOS™ or similar high-power series (Note: Model prefix 'IGC' typically denotes IGBT modules/chips in Infineon nomenclature, but specific datasheet for this exact suffix was not found in the provided text. The provided text contains data for IMW120R090M1H (SiC MOSFET), IPT017N12NM6 (MOSFET), IPI041N12N3G (MOSFET), and various automotive MCUs/sensors. No verified public datasheet content exists for IGC36T120T8LX1SA1 in the source material. Therefore, no overview can be generated without fabrication.)

Feature Summary

    Applications

      Procurement Notes

      Verification of this specific part number against official Infineon documentation is required as it does not appear in the provided knowledge base. Users should consult the official Infineon website or authorized distributors to confirm current production status, pinout compatibility, and thermal characteristics before procurement.

      Selection Notes

      Due to the absence of verified technical specifications for IGC36T120T8LX1SA1 in the provided source material, selection cannot be guided by specific electrical parameters such as Vce(sat) or switching times. Engineers must refer to the manufacturer's official datasheet to ensure the component meets the voltage, current, and thermal requirements of the target application.

      Part Context

      The model number format suggests a power semiconductor device, likely an Insulated Gate Bipolar Transistor (IGBT) given the 'IGC' prefix common in Infineon's product lines for industrial or automotive power modules. However, without explicit confirmation in the provided documents, its exact classification remains unverified within this context.

      Replacement Considerations

      No verified replacement parts are listed in the provided source material for IGC36T120T8LX1SA1. Cross-referencing with equivalent 1200V/36A IGBTs requires consulting official Infineon substitution guides or comparable industry standards, which are not included in the current dataset.

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