IGC54T65R3QEX1SA1

IGC54T65R3QEX1SA1

  • Description:IGBT TRENCH FS 650V 100A DIE
  • Series:TrenchStop™

SKU:c47587dc8807 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 100A DIE
  • Series:TrenchStop™
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):100 A
  • Current - Collector Pulsed (Icm):300 A
  • Vce(on) (Max) @ Vge, Ic:2.22V @ 15V, 100A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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IGC54T65R3QEX1SA1

Overview

The IGC54T65R3QEX1SA1 is a single Insulated Gate Bipolar Transistor (IGBT) chip manufactured by Infineon Technologies. It belongs to the TrenchStop series and features a maximum collector-emitter breakdown voltage of 650V with a continuous collector current rating of 100A. The device supports an operating junction temperature range from -40°C to 175°C. Published in 2012, this component is designed for high-power switching applications requiring robust performance under extreme thermal conditions.

Feature Summary

  • Utilizes TrenchStop technology for optimized switching characteristics
  • Supports high-temperature operation up to 175°C junction temperature
  • Designed as a discrete chip for flexible module integration

Applications

  • Industrial motor drives
  • Power supply units
  • Inverter systems

Procurement Notes

Verify the specific datasheet version and electrical characteristics against current design requirements. Confirm that the package type and pinout match the intended PCB layout or module assembly. Ensure thermal management solutions are adequate for the specified power dissipation and junction temperature limits during operation.

Selection Notes

Select this component when a 650V rated IGBT with 100A continuous current capability is required. Consider the wide operating temperature range for harsh environments. Evaluate the TrenchStop technology benefits for efficiency needs. Ensure compatibility with existing gate drive circuits and thermal interface materials for reliable long-term performance.

Part Context

This part is a single IGBT chip from Infineon's TrenchStop family. It is distinct from modules or packaged transistors, intended for direct mounting in custom power assemblies. The 650V rating places it in the standard medium-voltage power semiconductor category suitable for mains-connected applications.

Replacement Considerations

Consult official Infineon documentation for qualified replacements. Verify voltage, current, and thermal specifications match exactly. Cross-reference pinouts and package dimensions if substituting in existing designs.

IGC54T65R3QEX1SA1IGC54T65R3QEX1SA1

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