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The IGC99T120T8RQ is a bare die IGBT utilizing TRENCHSTOP™ IGBT4 High Speed Chip technology. It features a 1200 V collector-emitter voltage rating and a nominal continuous collector current of 100 A at a case temperature of 100 °C. The device has a die size of 9.5 mm x 10.35 mm with a thickness of 115 µm. Maximum ratings include a pulsed collector current of 300 A, a gate-emitter voltage limit of ±20 V, and an operating junction temperature range from -40 °C to +175 °C. The integrated gate resistor is typically 7.5 Ω.
Verify the specific ordering suffix against official Infineon documentation to confirm exact specifications. Confirm that the component is supplied as a bare die on foil rather than a packaged module. Ensure compliance with electrostatic discharge handling requirements per MIL-STD 883 during storage and assembly processes.
Select this component for designs requiring high-speed switching capabilities within medium power modules. Evaluate thermal management strategies carefully, as switching characteristics depend heavily on the final module design and mounting technology. Verify suitability for industrial applications, noting it lacks automotive qualification.
This component belongs to the IGBT4 family, specifically designed for industrial power control applications. It serves as a semiconductor chip intended for integration into larger power modules rather than standalone discrete use. The product line emphasizes efficiency and reliability in high-frequency power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided datasheet.