IGD01N120H2BUMA1

Description：IGBT 1200V 3.2A TO252-3
Series：-

SKU:29ce039584e4 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 3.2A TO252-3
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：3.2 A
Current - Collector Pulsed (Icm)：3.5 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 1A
Power - Max：28 W
Switching Energy：140µJ
Input Type：Standard
Gate Charge：8.6 nC
Td (on/off) @ 25°C：13ns/370ns
Test Condition：800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：PG-TO252-3-11
Grade：-
Qualification：-

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IGD01N120H2BUMA1

Overview

The IGD01N120H2BUMA1 is a HighSpeed 2-Technology IGBT in PG-TO-252-3-11 packaging. It features a collector-emitter voltage of 1200 V and a continuous collector current of 1.3 A at 100°C. The turn-off energy (Eoff) is optimized to 0.09 mJ at IC = 1 A. Operating junction temperature ranges from -40°C to +150°C, with a maximum power dissipation of 28 W.

Feature Summary

Second-generation HighSpeed technology for loss reduction in resonant circuits
Temperature stable behavior suitable for soft-switching applications
Parallel switching capability with tight parameter distribution

Applications

Zero Voltage Switching (ZVS) Converters
Resonant topologies
Switch Mode Power Supplies (SMPS)
Lamp Ballasts

Procurement Notes

Verify the specific suffix BUMA1 against official Infineon documentation to confirm exact reel or tube packaging specifications. Ensure the component matches the PG-TO-252-3-11 package outline and RoHS compliance status indicated in the datasheet before finalizing procurement orders.

Selection Notes

Select this component for low-power resonant converters requiring high-voltage blocking. The optimized Eoff makes it suitable for ZVT applications. Verify thermal management requirements against the RthJA of 50 K/W on standard PCBs. Ensure gate drive voltages remain within the ±20 V limit.

Part Context

This device belongs to the IGP/IGD HighSpeed 2 family designed for 1200V applications. It complements the IGP01N120H2, which shares identical electrical characteristics but utilizes a PG-TO-220-3-1 through-hole package instead of the surface-mount TO-252 format.