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IGLD65R055D2AUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is GANFET N-CH. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IGLD65R055D2AUMA1
- Description：GANFET N-CH
- Series：CoolGaN™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.6V @ 2.6mA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 3 V
- Vgs (Max)：-10V
- Input Capacitance (Ciss) (Max) @ Vds：330 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-LSON-8-1
- Package / Case：8-LDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for IGLD65R055D2AUMA1
Single FETs, MOSFETs Overview
The IGLD65R055D2AUMA1 is a CoolGaN™ G5 enhancement mode transistor designed for 650 V power conversion. It features a PG-LSON-8 package, 650 V continuous drain-source voltage, and 70 mΩ maximum on-state resistance. The device supports 60 A pulsed current, 4.7 nC typical gate charge, and operates within a -55°C to 150°C junction temperature range.
Single FETs, MOSFETs Feature Summary
- Enhancement mode normally-off technology ensures safe operation
- Ultra-fast switching with no reverse-recovery charge
- Capable of reverse conduction with low gate and output charge
- Superior commutation ruggedness and 2 kV HBM ESD standards
Single FETs, MOSFETs Applications
- Industrial SMPS based on half-bridge hard and soft switching topologies
- Telecom and datacenter applications using Totem pole PFC and high frequency LLC
- Charger and adapter designs
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with JEDEC industrial qualification requirements before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high power density and miniaturized form factors. Consider its narrow production tolerances and automated production quality for consistent performance in demanding industrial environments.
Single FETs, MOSFETs Part Context
Part of the CoolGaN™ Transistor 650 V G5 series, produced using 200 mm wafer technology. Designed to enable higher power density and reduced system BOM cost through efficient gallium nitride switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence with other GaN transistors without verifying pinout, thermal characteristics, and electrical ratings.
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