SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IGP10N60TXKSA1 is a TRENCHSTOP™ Series low loss IGBT in TO-220 package. It features a collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C, dropping to 18 A at 100°C. The typical saturation voltage is 1.5 V at 25°C. Switching characteristics include a turn-on energy of 0.16 mJ and turn-off energy of 0.27 mJ at 25°C. The device supports a maximum junction temperature of 175°C and has a short-circuit withstand time of 5 µs.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and Pb-free lead plating requirements with the manufacturer or authorized distributor before finalizing procurement orders.
Select this component for designs requiring robust performance up to 175°C junction temperature. Ensure thermal management accommodates the specified power dissipation limits. Verify that the required short-circuit withstand time aligns with system protection strategies.
This part belongs to the Infineon TRENCHSTOP™ Series, which combines trench gate and field-stop technologies. This series targets 600V applications, offering optimized conduction and switching losses compared to standard NPT technologies while maintaining safe paralleling capabilities.
Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility based solely on voltage and current ratings without verifying switching characteristics and thermal resistance parameters.
The maximum short-circuit withstand time is 5 µs under conditions of VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.
Yes, the NPT technology offers easy parallel switching capability due to the positive temperature coefficient in VCE(sat).
The typical gate charge (QGate) is 62 nC at VCC = 480V, IC = 10A, and VGE = 15V.