SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IGP40N65H5XKSA1 is a single N-channel silicon IGBT from Infineon's TRENCHSTOP™ 5 series, designed for high-speed switching applications. It features a PG-TO220-3 through-hole package with a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 74 A at 25°C. The device exhibits a maximum saturation voltage (VCEsat) of 1.65 V at 25°C and supports a maximum junction temperature of 175°C. Key electrical parameters include a gate charge (QG) of 95 nC, turn-off energy (Eoff) of 0.12 mJ, and total switching energy (Ets) of 0.51 mJ under standard test conditions.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component meets all required thermal and electrical ratings for the intended application environment. Ensure compatibility with existing driver circuits regarding gate charge and threshold voltage specifications before finalizing procurement.
Select this component for designs requiring robust performance in mid-power industrial applications. The 650V rating provides adequate headroom for common bus voltages. Consider the thermal resistance characteristics when designing heatsinking solutions. Verify that the switching speed aligns with the electromagnetic interference (EMI) constraints of the system.
This part belongs to the High-Speed 5 IGBT family within the TRENCHSTOP™ 5 technology line. It serves as a direct replacement for previous generation IGBTs in many legacy designs. The 'IGP' prefix denotes the PG-TO220-3 package variant, distinguishing it from the TO-247-3 packaged 'IGW' counterpart.
Official datasheets indicate plug-and-play replacement capability for previous generation IGBTs. Verify pinout compatibility and thermal interface dimensions when substituting older models.