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Product Detailed Parameters
- Description：IGBT 500V 25A TO-218-5
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-218-5
- Supplier Device Package：TO-218-5
- Grade：-
- Qualification：-
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Overview
The IGT7E20CS is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 500 V and a maximum continuous collector current of 25 A. The device is designed for through-hole mounting in a TO-218-5 package. This component serves as a high-power switching element suitable for applications requiring robust voltage handling and moderate current capacity within industrial or military electronic systems.
Feature Summary
- Single IGBT configuration for discrete power switching
- Through-hole compatible TO-218-5 package design
- 500 V collector-emitter breakdown rating
- 25 A maximum continuous collector current capability
Applications
- Industrial motor control circuits
- Military communication equipment power stages
- Electronic warfare system switching modules
Procurement Notes
Verify the manufacturer origin, as Harris Corporation's electronics division merged with L3 Technologies to form L3Harris Technologies. Ensure the part number matches the specific TO-218-5 package variant. Confirm RoHS compliance status if required for modern assembly processes. Check for available datasheets from L3Harris archives to validate electrical characteristics against original Harris specifications before integration into critical designs.
Selection Notes
Select this component when a 500 V rated IGBT with 25 A current capacity is required in a through-hole format. Consider the thermal performance of the TO-218-5 package for heat dissipation needs. Evaluate the switching speed requirements against typical IGBT characteristics. Ensure the application voltage and current levels remain within the specified 500 V and 25 A limits for reliable operation.
Part Context
Harris Corporation was a prominent defense and technology company specializing in surveillance, microwave weaponry, and electronic systems. In 2019, it merged with L3 Technologies to create L3Harris Technologies. The IGT7E20CS represents legacy Harris semiconductor products, often utilized in specialized military and aerospace applications where ruggedness and specific voltage ratings were critical.
Replacement Considerations
Direct substitutes may include other 500 V, 25 A IGBTs in TO-218 packages from manufacturers like Infineon, Mitsubishi, or ON Semiconductor. Verify pinout compatibility and thermal resistance values. Cross-reference with L3Harris recommended replacement lists if available for legacy system maintenance.
