IGTM10N50

$1.42

Description：N CHANNEL IGBT FOR SWITCHING APP
Series：-

SKU:3efd5bb33e67 Category: Single IGBTs Brand: Harris Corporation

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Product introduction

Product Detailed Parameters

Description：N CHANNEL IGBT FOR SWITCHING APP
Series：-
Mfr：Harris Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：500 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Supplier Device Package：TO-3
Grade：-
Qualification：-

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IGTM10N50

Overview

The IGTM10N50 is a Power Field-Effect Transistor manufactured by Harris Corporation. It is an N-channel, single-element silicon device utilizing Metal-Oxide Semiconductor FET technology. The component features a TO-204AA package with a flange mount configuration and round metal body. Key electrical parameters include a maximum drain current of 10 A, a minimum drain-source breakdown voltage of 500 V, and a maximum on-resistance of 0.6 ohms. The device operates in enhancement mode with the case connected to the drain. It supports a maximum operating temperature of 150 °C.

Feature Summary

High-voltage capability suitable for power switching applications
Flange mount construction for effective thermal management
Integrated built-in diode configuration

Applications

DC motor control circuits
Power supply switching stages
Inductive load driving

Procurement Notes

Verify the manufacturer status as Harris Corporation has undergone corporate restructuring and acquisitions. Confirm the specific datasheet version and revision history to ensure parameter accuracy. Check RoHS compliance status as indicated in available records. Validate the TO-204AA package dimensions against mechanical design requirements before integration.

Selection Notes

Select this component when a 500V rating and 10A continuous current capacity are required. The 0.6 ohm on-resistance dictates conduction loss calculations. Ensure the thermal design accommodates the flange mount interface. Compare performance metrics against modern equivalents if long-term availability is a constraint.

Part Context

This part belongs to the high-voltage MOSFET category from Harris Corporation's legacy semiconductor portfolio. It shares functional similarities with other 500V/10A devices but is distinct due to its specific package and historical manufacturing origin. Understanding its vintage is critical for compatibility with contemporary circuit designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values when evaluating alternative components from other manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.