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The IGTP10N40A is a single NPN silicon power bipolar transistor manufactured by Harris Corporation. It features a collector-emax breakdown voltage of 400 V and a maximum continuous collector current of 10 A. The device utilizes a TO-204AA metal flange mount package, with the case connected to the collector terminal. It has a minimum DC current gain (hFE) of 8 and supports a maximum operating temperature of 200 °C.
Verify the component matches the specific Harris Corporation datasheet specifications, particularly the 400 V rating and TO-204AA package dimensions. Confirm the manufacturer origin as Harris Corporation to ensure authenticity, as counterfeits may exist. Check for compliance with relevant environmental standards if required by the application. Ensure the supplier provides traceable documentation linking to the original manufacturer's production records.
Select this component when a 400 V rated NPN transistor with 10 A current capacity is required. The TO-204AA metal package is suitable for applications needing direct heatsink mounting via the collector. Consider the minimum hFE of 8 for base drive circuit design. This part is appropriate for medium-power switching tasks where thermal management through a flange mount is preferred over plastic encapsulated packages.
This component belongs to the family of power bipolar transistors produced by Harris Corporation. It is designed for general-purpose power switching applications. The TO-204AA package is a standard metal can format often used in older or rugged industrial equipment. Similar parts from other manufacturers may offer comparable electrical ratings but differ in physical dimensions and thermal characteristics.
Direct substitutes must match the 400 V, 10 A, NPN specification and TO-204AA package. Verify pinout compatibility, specifically that the case is connected to the collector. Cross-reference with equivalent parts from other semiconductor vendors ensuring identical electrical parameters and mechanical footprint.