IGW03N120H2FKSA1

IGW03N120H2FKSA1

$1.63
  • Description:IGBT 1200V 9.6A TO247-3
  • Series:-

SKU:30a04a075a48 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 1200V 9.6A TO247-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):9.6 A
  • Current - Collector Pulsed (Icm):9.9 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
  • Power - Max:62.5 W
  • Switching Energy:290µJ
  • Input Type:Standard
  • Gate Charge:22 nC
  • Td (on/off) @ 25°C:9.2ns/281ns
  • Test Condition:800V, 3A, 82Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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IGW03N120H2FKSA1

Overview

The IGW03N120H2FKSA1 is a single IGBT from Infineon Technologies utilizing HighSpeed 2 technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 9.6 A at 25°C. The device operates within a junction temperature range of -40°C to +150°C and dissipates up to 62.5 W. Packaged in PG-TO247-3, it exhibits a gate charge of 22 nC and turn-off energy of 0.15 mJ under standard test conditions.

Feature Summary

  • HighSpeed 2 Technology optimized for resonant circuits
  • Temperature stable behavior across operating ranges
  • Parallel switching capability with tight parameter distribution

Applications

  • Switched-mode power supplies (SMPS)
  • Lamp ballasts
  • Zero-voltage switching (ZVS) converters

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance and Pb-free lead plating status. Check datasheet revision history for updates. Ensure storage conditions meet specified limits. Validate package integrity upon receipt.

Selection Notes

Evaluate thermal resistance requirements against application constraints. Consider gate resistor values for optimal switching performance. Assess soft-switching topology compatibility. Verify voltage and current margins for system reliability.

Part Context

Part of the IGP/IGW03N120H2 series offering second-generation HighSpeed technology for 1200V applications. Designed specifically for loss reduction in resonant circuits while maintaining robust parallel operation capabilities.

Replacement Considerations

STMicroelectronics STGWA40H120DF2 is listed as a similar replacement option.

IGW03N120H2FKSA1IGW03N120H2FKSA1
$1.63
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