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The IGW03N120H2FKSA1 is a single IGBT from Infineon Technologies utilizing HighSpeed 2 technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 9.6 A at 25°C. The device operates within a junction temperature range of -40°C to +150°C and dissipates up to 62.5 W. Packaged in PG-TO247-3, it exhibits a gate charge of 22 nC and turn-off energy of 0.15 mJ under standard test conditions.
Verify component authenticity through authorized channels. Confirm RoHS compliance and Pb-free lead plating status. Check datasheet revision history for updates. Ensure storage conditions meet specified limits. Validate package integrity upon receipt.
Evaluate thermal resistance requirements against application constraints. Consider gate resistor values for optimal switching performance. Assess soft-switching topology compatibility. Verify voltage and current margins for system reliability.
Part of the IGP/IGW03N120H2 series offering second-generation HighSpeed technology for 1200V applications. Designed specifically for loss reduction in resonant circuits while maintaining robust parallel operation capabilities.
STMicroelectronics STGWA40H120DF2 is listed as a similar replacement option.