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The IGW08T120FKSA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the Trenchstop IGBT4 series. It features a TO-247-3 through-hole package and supports a collector-emitter voltage of 1200 V with a continuous collector current of 16 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.2 V and a maximum power dissipation of 70 W. It operates within a temperature range of -40°C to +150°C, offering standard gate drive compatibility for efficient power switching applications.
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Select this component for applications requiring 1200 V isolation and moderate current handling up to 16 A. Consider thermal management capabilities given the 70 W dissipation limit in a TO-247-3 package. Evaluate gate charge characteristics for switching speed requirements. Compare against newer generations like H5 series for improved efficiency if available.
This IGBT belongs to Infineon's Trenchstop family, known for balancing conduction losses and switching performance. The TO-247-3 form factor is standard for medium-power discrete modules. It serves as a fundamental switching element in power electronics, distinct from integrated modules or lower-voltage variants.
Public confirmed substitute: IGW15N120H3FKSA1.