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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 30A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：217 W
- Switching Energy：1.55mJ
- Input Type：Standard
- Gate Charge：75 nC
- Td (on/off) @ 25°C：21ns/260ns
- Test Condition：600V, 15A, 35Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IGW15N120H3FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing HighSpeed 3 technology. It features a TO-247-3 through-hole package and operates with a maximum collector-emitter voltage of 1200 V. The device supports a continuous collector current of 30 A at 25°C and 15 A at 100°C, with a peak pulsed current capability of 60 A. Key electrical parameters include a saturation voltage of 2.05 V, gate charge of 75 nC, and power dissipation of 217 W. It functions within a temperature range of -40°C to +175°C.
Feature Summary
- HighSpeed 3 technology enables switching frequencies between 20 kHz and 100 kHz for optimized performance in hard-switching applications.
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- DC-DC converters
Procurement Notes
Verify the specific suffix FKSA1 against official datasheets to confirm packaging details and compliance status. Ensure the ordering part number matches the required RoHS classification and tape-and-reel or tube configuration. Cross-reference the manufacturer's latest documentation to validate any recent design changes or obsolescence notices before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high-speed switching capabilities up to 100 kHz. The 1200 V rating suits medium-voltage applications, while the TO-247-3 package facilitates efficient thermal management. Consider the 2.05 V saturation voltage for conduction loss calculations and ensure the gate drive circuit accommodates the 75 nC gate charge requirement.
Part Context
This IGBT belongs to the HighSpeed 3 series, which integrates Trench and Fieldstop technologies. This family is engineered for superior efficiency in high-frequency power conversion. The device represents a discrete solution designed to replace older generation IGBTs in applications demanding faster switching speeds and reduced energy losses.
Replacement Considerations
Direct substitutes include IKW15N120H3 and IGW15N120H3. Verify pinout compatibility and thermal resistance specifications when transitioning between these variants to ensure equivalent performance in the target application.
