IGW40N120H3FKSA1

$6.21

Description：IGBT TRENCH FS 1200V 80A TO247-3
Series：TrenchStop®

SKU:7e7198693f06 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 40A
Power - Max：483 W
Switching Energy：3.16mJ
Input Type：Standard
Gate Charge：185 nC
Td (on/off) @ 25°C：30ns/290ns
Test Condition：600V, 40A, 12Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IGW40N120H3FKSA1

Overview

The IGW40N120H3FKSA1 is a single silicon IGBT from the HighSpeed 3 series, housed in a TO-247-3 package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.05 V and a power dissipation rating of 483 W. Operating temperatures range from -40°C to +175°C.

Feature Summary

Utilizes Trench and Fieldstop technology for optimized switching performance.
Integrated anti-parallel fast recovery diode for efficient commutation.
Designed for high-speed switching applications up to 100 kHz.

Applications

High-frequency induction heating systems
Switched-mode power supplies (SMPS)
Motor control drives

Procurement Notes

Verify the specific suffix FKSA1 against official Infineon documentation to confirm tape-and-reel packaging requirements. Ensure the ordering part number matches the exact datasheet revision to avoid discrepancies in electrical characteristics or pinout configurations during procurement.

Selection Notes

Select this component for designs requiring high switching speeds within the 20 kHz to 100 kHz range. The TO-247-3 package facilitates through-hole mounting with adequate thermal management capabilities for moderate power levels. Consider the integrated diode's reverse recovery characteristics when designing snubber circuits.

Part Context

This part belongs to Infineon's HighSpeed 3 (H3) IGBT family, which combines Trench gate technology with Fieldstop layers. This architecture reduces switching losses compared to standard IGBTs, making it suitable for applications demanding higher efficiency and frequency operation than traditional hard-switching devices.