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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 100A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
- Power - Max：333 W
- Switching Energy：2.6mJ
- Input Type：Standard
- Gate Charge：310 nC
- Td (on/off) @ 25°C：26ns/299ns
- Test Condition：400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IGW50N60TFKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a TO-247-3 through-hole package and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 90 A at 25°C and handles a power dissipation of 333 W. Key electrical parameters include a saturation voltage of 1.5 V, gate-emitter voltage limits of ±20 V, and a leakage current of 100 nA. It functions within a temperature range of -40°C to +175°C.
Feature Summary
- Incorporates Trenchstop IGBT3 technology for optimized switching performance and low conduction losses.
- Designed for robust operation in high-power applications with a wide safe operating area.
- Features a single configuration suitable for standard discrete mounting requirements.
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify the complete part number including suffixes against official Infineon documentation to ensure correct technical specifications. Confirm RoHS compliance status via the manufacturer's data sheet. Check for any specific handling or storage requirements detailed in the product datasheet before procurement.
Selection Notes
Select this component for designs requiring 600 V blocking capability and high current handling in a TO-247-3 package. Consider the 1.5 V saturation voltage for thermal management calculations. Ensure the driving circuit can support the required gate voltage levels and that the PCB layout accommodates the through-hole mounting style.
Part Context
This device belongs to the Trenchstop IGBT3 family, which combines trench gate technology with field-stop structures to reduce switching losses. It is distinct from other variants like the IKW series by its specific trade name and packaging configuration within the broader discrete IGBT portfolio.
Replacement Considerations
Cross-reference with other Infineon Trenchstop IGBT3 devices in the TO-247-3 package. Verify pinout compatibility and electrical ratings such as VCEO and IC before substituting with similar models from the same manufacturer.
