IHW20N135R5XKSA1

Overview

The IHW20N135R5XKSA1 is a Reverse Conducting IGBT from the Resonant Switching Series, manufactured by Infineon Technologies. It features a 1350 V collector-emitter breakdown voltage and a monolithic body diode. The device utilizes TRENCHSTOP technology for low saturation voltage and positive temperature coefficient behavior. Key electrical parameters include a maximum DC collector current of 40 A at 25°C case temperature, reducing to 20 A at 100°C. The collector-emitter saturation voltage is typically 1.65 V at 25°C with a 20 A load. The component operates within a junction temperature range of -40°C to +175°C and is housed in a PG-TO247-3 package.

Feature Summary

• TRENCHSTOP technology provides tight parameter distribution and high ruggedness with stable temperature behavior.
• Monolithic body diode designed for soft commutation with low forward voltage characteristics.
• Positive temperature coefficient in saturation voltage enables easy parallel switching capability.

Applications

• Inductive cooking systems
• Inverterized microwave ovens
• Resonant converters
• Soft switching applications

Procurement Notes

Verify the specific ordering suffix XKSA1 against official documentation to confirm packaging details and compliance status. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the datasheet revision date with the delivered product marking to ensure technical consistency. Confirm RoHS and halogen-free compliance requirements match the intended application standards before finalizing orders.

Selection Notes

Select this component for resonant and soft-switching topologies requiring high voltage blocking capabilities. The integrated reverse-conducting diode simplifies circuit design by eliminating external freewheeling diodes. Consider the thermal resistance values when designing heat sinks, as power dissipation decreases significantly at elevated case temperatures. Verify gate drive requirements align with the specified threshold voltages and charge characteristics for optimal switching performance.

Part Context

This device belongs to Infineon's Resonant Switching Series of Reverse Conducting IGBTs. It is engineered specifically for applications demanding high reliability and improved efficiency in resonant circuits. The integration of the body diode reduces system complexity and component count compared to standard IGBT configurations.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current handling, and package dimensions. Verify that alternative devices support similar soft-switching behaviors if used in resonant topologies.

FAQ

Is the IHW20N135R5 qualified for automotive applications?

No, the product is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.

What is the maximum non-repetitive peak collector current?

The maximum non-repetitive peak collector current (ICSM) is 200 A, limited by junction temperature and pulse width constraints.

Can multiple units be connected in parallel?

Yes, the device features a positive temperature coefficient in its saturation voltage, which facilitates easy parallel switching capability.