SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IHW25N140R5LXKSA1 is a Reverse-Conducting IGBT with a monolithic body diode, rated at 1400 V collector-emitter voltage and 25 A DC collector current. It features a TO-247-3 package with an internal emitter inductance of 13 nH. The device exhibits a typical saturation voltage of 1.6 V at 20 A and 25°C, with a gate charge of 150 nC. Soft turn-off energy is 0.094 mJ at 25°C. The integrated diode supports a forward current of 75 A at 25°C with a forward voltage of 1.55 V at 20 A.
Verify the component against the official Infineon datasheet revision 1.10 to confirm electrical parameters and physical dimensions. Ensure the ordering suffix matches the required packaging configuration. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.
Select this component for resonant applications requiring soft switching behavior. Verify that the operating junction temperature remains within the -40°C to 175°C range. Consider the thermal resistance values when designing heat sinks. Ensure the gate drive circuit accommodates the specified gate charge and threshold voltage requirements for reliable operation.
This device belongs to Infineon's RC-H Reverse Conducting IGBT series, designed for higher efficiency and reliability in induction heating. It integrates an IGBT and a diode in a single package to reduce system complexity. The R5L designation indicates specific switching characteristics optimized for soft commutation, distinguishing it from standard hard-switching IGBTs.
IHW25N140R5L is the base part number for the IHW25N140R5LXKSA1 variant. Verify pinout compatibility and thermal resistance specifications when substituting with other RC IGBTs. Confirm that alternative devices support soft commutation if used in resonant circuits.
No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The non-repetitive peak collector current (ICSM) is 200 A, limited by a maximum junction temperature of 175°C and a pulse width less than 3 µs.
Yes, the device offers easy paralleling capability due to the positive temperature coefficient in its collector-emitter saturation voltage (VCEsat).