IHW30N120R2

IHW30N120R2

  • Description:IGBT NPT FS 1200V 60A TO247-3
  • Series:TrenchStop®

SKU:b237e45bf0da Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT FS 1200V 60A TO247-3
  • Series:TrenchStop®
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 30A
  • Power - Max:390 W
  • Switching Energy:3.1mJ
  • Input Type:Standard
  • Gate Charge:198 nC
  • Td (on/off) @ 25°C:-/792ns
  • Test Condition:600V, 30A, 28Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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IHW30N120R2

Overview

The IHW30N120R2 is a Reverse Conducting IGBT with a monolithic body diode from the Resonant Switching Series. It features TrenchStop and Fieldstop technology for 1200V applications, offering tight parameter distribution and high ruggedness. The device utilizes NPT technology for easy parallel switching due to a positive temperature coefficient in VCE(sat). Key electrical ratings include a collector-emitter voltage of 1200V, a DC collector current of 60A at 25°C (30A at 100°C), and a maximum junction temperature of 175°C. It is housed in a PG-TO-247-3 package.

Feature Summary

  • Powerful monolithic body diode with very low forward voltage that clamps negative voltages
  • TrenchStop and Fieldstop technology ensures tight parameter distribution and temperature stable behavior
  • NPT technology provides easy parallel switching capability due to positive temperature coefficient in VCE(sat)
  • Low EMI generation suitable for sensitive resonant applications

Applications

  • Induction cooking appliances
  • Microwave ovens
  • Soft switching applications
  • Resonant converters

Procurement Notes

Verify component authenticity by checking the datasheet revision date against official Infineon records. Confirm the marking code H30R1202 on the package matches the specific part number. Ensure the ordering suffix aligns with the required packaging format, as suffixes may alter physical dimensions or lead plating specifications without changing internal function.

Selection Notes

Select this component for designs requiring integrated reverse conduction to simplify circuit topology. The 1200V rating supports high-voltage resonant topologies. Consider the thermal resistance values when designing heatsinking for continuous operation. Verify gate drive requirements against the specified threshold voltage range to ensure reliable turn-on across the full operating temperature spectrum.

Part Context

This device belongs to Infineon's Resonant Switching Series, specifically designed for soft-switching environments. It integrates an IGBT and a fast recovery diode into a single TO-247 package. The series emphasizes low switching losses and robust performance in high-frequency AC-DC and DC-DC conversion systems where traditional discrete solutions would increase parasitic inductance.

Replacement Considerations

Direct replacements must match the 1200V blocking voltage, 30A/60A current ratings, and PG-TO-247-3 package. Verify that substitute RC-IGBTs possess similar monolithic diode characteristics and thermal resistance profiles to maintain system efficiency and reliability.

FAQ

What technology does the IHW30N120R2 use to enable parallel switching?

It uses NPT (Non-Punch-Through) technology, which offers a positive temperature coefficient in VCE(sat), facilitating easy parallel switching.

How does the monolithic body diode function in this device?

The powerful monolithic body diode has a very low forward voltage and serves to clamp negative voltages within the circuit.

What is the maximum junction temperature for this component?

The maximum operating junction temperature is 175 °C.

IHW30N120R2IHW30N120R2

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