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The IHW30N120R2 is a Reverse Conducting IGBT with a monolithic body diode from the Resonant Switching Series. It features TrenchStop and Fieldstop technology for 1200V applications, offering tight parameter distribution and high ruggedness. The device utilizes NPT technology for easy parallel switching due to a positive temperature coefficient in VCE(sat). Key electrical ratings include a collector-emitter voltage of 1200V, a DC collector current of 60A at 25°C (30A at 100°C), and a maximum junction temperature of 175°C. It is housed in a PG-TO-247-3 package.
Verify component authenticity by checking the datasheet revision date against official Infineon records. Confirm the marking code H30R1202 on the package matches the specific part number. Ensure the ordering suffix aligns with the required packaging format, as suffixes may alter physical dimensions or lead plating specifications without changing internal function.
Select this component for designs requiring integrated reverse conduction to simplify circuit topology. The 1200V rating supports high-voltage resonant topologies. Consider the thermal resistance values when designing heatsinking for continuous operation. Verify gate drive requirements against the specified threshold voltage range to ensure reliable turn-on across the full operating temperature spectrum.
This device belongs to Infineon's Resonant Switching Series, specifically designed for soft-switching environments. It integrates an IGBT and a fast recovery diode into a single TO-247 package. The series emphasizes low switching losses and robust performance in high-frequency AC-DC and DC-DC conversion systems where traditional discrete solutions would increase parasitic inductance.
Direct replacements must match the 1200V blocking voltage, 30A/60A current ratings, and PG-TO-247-3 package. Verify that substitute RC-IGBTs possess similar monolithic diode characteristics and thermal resistance profiles to maintain system efficiency and reliability.
It uses NPT (Non-Punch-Through) technology, which offers a positive temperature coefficient in VCE(sat), facilitating easy parallel switching.
The powerful monolithic body diode has a very low forward voltage and serves to clamp negative voltages within the circuit.
The maximum operating junction temperature is 175 °C.