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Product Detailed Parameters
- Description：IGBT TRENCH FS 1350V 60A TO247-3
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1350 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 30A
- Power - Max：330 W
- Switching Energy：1.4mJ (off)
- Input Type：Standard
- Gate Charge：235 nC
- Td (on/off) @ 25°C：-/310ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
Download product information
Overview
The IHW30N135R5XKSA1 is a Reverse Conducting IGBT with a monolithic body diode, part of the Resonant Switching Series. It features TRENCHSTOP™ technology for tight parameter distribution and easy parallel switching. Key electrical parameters include a collector-emitter voltage (VCE) of 1350 V, a continuous collector current (IC) of 30 A at 100°C case temperature, and a saturation voltage (VCEsat) of 1.65 V at 25°C. The device operates within a junction temperature range of -40°C to +175°C and utilizes a PG-TO247-3 package.
Feature Summary
- Features a powerful monolithic body diode designed for soft commutation with low forward voltage.
- Utilizes TRENCHSTOP™ technology providing high ruggedness, temperature stable behavior, and positive temperature coefficient in VCEsat for easy parallel switching.
- Optimized for resonant applications with low EMI characteristics.
Applications
- Induction cooking
- Microwave ovens
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer marking 'H30PR5' on the device casing against official Infineon datasheet specifications. Ensure the ordering suffix XKSA1 matches the required packaging configuration. Confirm compliance with RoHS and halogen-free standards as specified in the product documentation prior to integration into final assemblies.
Selection Notes
Select this component for resonant switching circuits requiring high voltage blocking capability and integrated reverse conduction. The positive temperature coefficient of the saturation voltage facilitates reliable parallel operation without active current balancing. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and maximum power dissipation limits under varying case temperatures.
Part Context
This discrete IGBT belongs to Infineon's Resonant Switching Series, specifically engineered for high-efficiency power conversion. It integrates an IGBT switch and a freewheeling diode in a single TO-247 package, reducing system footprint compared to discrete solutions. The technology targets domestic appliance power stages where reliability and electromagnetic interference reduction are critical design constraints.
Replacement Considerations
Direct replacement requires verifying pinout compatibility and electrical ratings. Equivalent devices must support 1350 V blocking voltage and similar current handling capabilities in a PG-TO247-3 package. Consult official substitution lists for confirmed alternatives within the same product family or technology generation.
FAQ
What is the maximum non-repetitive peak collector current?
The maximum non-repetitive peak collector current (ICSM) is 200 A, limited by the maximum junction temperature of 175°C and pulse width less than 3 µs.
Does this component have an internal gate resistor?
No, the electrical characteristics specify that the integrated gate resistor (rG) is none.
Is this component qualified for automotive applications?
No, the product documentation explicitly states that it is not qualified according to the AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.
