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The IHW30N65R5XKSA1 is a reverse-conducting IGBT with a monolithic body diode from the Resonant Switching Series. It features TRENCHSTOP technology, offering low VCEsat and Eoff. Key parameters include a collector-emitter voltage of 650V, continuous collector current of 60A at 25°C, and saturation voltage of 1.35V. The device operates up to 175°C junction temperature with power dissipation of 176W.
Verify component authenticity through authorized Infineon distributors or direct channels. Confirm RoHS compliance and Pb-free lead plating status. Ensure ordering suffix XKSA1 matches required packaging specifications. Validate datasheet revision against current official documentation before integration into designs.
Select based on resonant switching requirements and thermal management needs. Consider the positive temperature coefficient for parallel operation stability. Evaluate gate charge and switching energy losses against specific circuit topologies. Ensure case temperature limits are respected for optimal lifetime.
Part of Infineon's Resonant Switching Series utilizing TRENCHSTOP technology. Designed for industrial power control applications requiring efficient switching and robust performance. Manufactured using silicon technology in a PG-TO247-3 package.
Check electrical compatibility with existing designs. Verify pinout alignment and thermal resistance characteristics. Review switching speed differences to ensure gate drive circuit adjustments if necessary.
The maximum operating junction temperature is +175°C.
No, the IHW30N65R5XKSA1 has no internal gate resistor.
No, this product is not qualified according to AEC Q100 or AEC Q101 documents.