SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IHW40T60 is a TRENCHSTOP™ Series IGBT in PG-TO247-3 package. It features a collector-emitter voltage of 600V and a DC collector current of 80A at 25°C case temperature, dropping to 40A at 100°C. The typical collector-emitter saturation voltage is 1.55V at 25°C. Maximum junction temperature is 175°C. Short circuit withstand time is 5µs. Thermal resistance from junction to case is 0.49 K/W for the IGBT and 1.05 K/W for the integrated diode.
Verify component authenticity through authorized Infineon distributors or official channels. Confirm datasheet revision IFAG IPC TD VLS Rev. 2.1 matches the delivered product. Ensure storage conditions comply with moisture sensitivity levels prior to soldering. Validate that the PG-TO247-3 package marking H40T60B corresponds to the ordered part number.
Select this component for 600V applications requiring low conduction losses and high thermal stability. The integrated diode simplifies circuit design by eliminating external freewheeling requirements. Consider the 5µs short circuit withstand capability for robust protection schemes. Evaluate thermal management needs based on the specified junction-to-case resistance values.
This device belongs to the TRENCHSTOP™ Series, utilizing advanced fieldstop technology optimized for 600V ratings. It represents a monolithic integration of an IGBT switch and a recovery diode within a single TO-247-3 housing. The series emphasizes low electromagnetic interference and consistent electrical parameters across manufacturing batches.
No public confirmed substitute part numbers are documented in the provided source material.
The maximum short circuit withstand time is 5 microseconds.
The typical VCE(sat) is 1.55V at 25°C and increases to 1.90V at 175°C under rated current conditions.
The internal emitter inductance is typically 13 nH, measured 5mm from the case.