IJW120R100T1FKSA1

Overview

The Infineon IJW120R100T1FKSA1 is a 1200 V CoolSiC™ Power Transistor utilizing a normally-on Silicon Carbide JFET technology in a PG-TO247-3 package. Key electrical parameters include a maximum drain-source on-state resistance (RDS(on)) of 100 mΩ at 25 °C and a typical total gate charge (QG) of 72 nC. The device supports a continuous drain current (IDS) of 26 A at 25 °C case temperature, with a pulsed current capability of 78 A. It features a maximum operating junction temperature (Tj) of 175 °C and a thermal resistance from junction to case (RthJC) of 0.78 K/W.

Feature Summary

• Normally-on JFET architecture eliminates reliability issues associated with SiC gate oxides.
• Monolithically integrated body diode provides switching performance comparable to external Schottky diodes.
• Extremely low switching and conduction losses enable higher system efficiency and power density.
• High short-circuit ruggedness and wide operating temperature range enhance system reliability.

Applications

• Solar inverters
• High voltage DC/DC or AC/DC conversion
• Bidirectional inverters

Procurement Notes

Verify the specific ordering suffix 'FKSA1' against official Infineon documentation to confirm packaging details and reel specifications. Ensure compatibility with the recommended direct drive technology using dedicated drivers like the 1EDI30J12Cx for optimal performance and safety.

Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling requirements due to low intrinsic capacitance and fast switching. Note that as a normally-on device, it requires a negative gate voltage for turn-off and specific driver configurations to prevent unintended conduction during startup or fault conditions.

Part Context

This part belongs to the CoolSiC™ family of active power switches based on silicon carbide. It combines the material properties of SiC with a JFET concept to achieve high performance and ruggedness. The device is designed to replace traditional silicon-based solutions in high-voltage power electronics to improve efficiency and compactness.

Replacement Considerations

Direct replacement requires addressing the normally-on nature of the JFET. Cascode configurations with low-voltage MOSFETs or direct drive circuits are necessary alternatives to standard MOSFET drivers. Verify thermal management capabilities match the RthJC of 0.78 K/W.

FAQ

How is the normally-on behavior of the JFET managed in circuit design?

The device turns off at negative gate voltage and turns on at zero volts. Designers must use a negative gate drive voltage for turn-off and can employ cascode configurations or direct drive technologies to ensure safe operation.

What is the recommended external gate loop resistance?

The datasheet specifies a maximum gate loop resistance for turn-off of 5.1 Ω. Using very low turn-off gate resistors, down to zero Ohms, is recommended to achieve maximum performance and avoid parasitic turn-on effects.

How does the internal body diode perform during reverse recovery?

The monolithically integrated body diode exhibits switching performance close to external SiC Schottky barrier diodes with load-current-independent reverse recovery charge. Active turn-on of the channel is preferred for synchronous rectification to minimize losses.