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The IKA03N120H2XKSA1 is a HighSpeed 2-Technology IGBT with an integrated anti-parallel Emitter Controlled HE diode. It features a collector-emitter voltage of 1200 V, a continuous collector current of 3 A at 25°C, and a turn-off energy of 0.15 mJ. The device operates within a junction temperature range of -40 to +150°C and utilizes PG-TO-220-3 packages.
Verify the specific package variant (PG-TO-220-3-31 or PG-TO-220-3-34) required for your design. Confirm RoHS compliance and Pb-free lead plating status against the latest datasheet revision. Ensure thermal management aligns with the specified junction-to-case resistance values.
Select this component for low-loss resonant switching applications requiring high-speed performance. Evaluate the 0.15 mJ turn-off energy and diode reverse recovery characteristics against circuit requirements. Consider the 1200 V rating and 3 A current capability for appropriate load conditions.
This part belongs to Infineon's HighSpeed 2 family, optimized for 1200V applications. It offers parallel switching capability and loss reduction in resonant topologies compared to standard technologies. The product spectrum includes PSpice models for simulation support.
Check for updated revisions within the HighSpeed 2 series. Verify pinout compatibility if substituting with other TO-220-3 IGBTs. Ensure equivalent voltage and current ratings are maintained for safe operation.