IKA03N120H2XKSA1

IKA03N120H2XKSA1

  • Description:IGBT 1200V 8.2A TO220-3-31
  • Series:-

SKU:dcc7a3fee594 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 8.2A TO220-3-31
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):8.2 A
  • Current - Collector Pulsed (Icm):9:00 AM
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
  • Power - Max:29 W
  • Switching Energy:290µJ
  • Input Type:Standard
  • Gate Charge:8.6 nC
  • Td (on/off) @ 25°C:9.2ns/281ns
  • Test Condition:800V, 3A, 82Ohm, 15V
  • Reverse Recovery Time (trr):52 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:PG-TO220-3-31
  • Grade:-
  • Qualification:-

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IKA03N120H2XKSA1

Overview

The IKA03N120H2XKSA1 is a HighSpeed 2-Technology IGBT with an integrated anti-parallel Emitter Controlled HE diode. It features a collector-emitter voltage of 1200 V, a continuous collector current of 3 A at 25°C, and a turn-off energy of 0.15 mJ. The device operates within a junction temperature range of -40 to +150°C and utilizes PG-TO-220-3 packages.

Feature Summary

  • Second-generation HighSpeed technology designed for resonant circuits
  • Integrated soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Temperature stable behavior with tight parameter distribution
  • Qualified according to JEDEC standards

Applications

  • TV horizontal line deflection circuits
  • Resonant power conversion applications

Procurement Notes

Verify the specific package variant (PG-TO-220-3-31 or PG-TO-220-3-34) required for your design. Confirm RoHS compliance and Pb-free lead plating status against the latest datasheet revision. Ensure thermal management aligns with the specified junction-to-case resistance values.

Selection Notes

Select this component for low-loss resonant switching applications requiring high-speed performance. Evaluate the 0.15 mJ turn-off energy and diode reverse recovery characteristics against circuit requirements. Consider the 1200 V rating and 3 A current capability for appropriate load conditions.

Part Context

This part belongs to Infineon's HighSpeed 2 family, optimized for 1200V applications. It offers parallel switching capability and loss reduction in resonant topologies compared to standard technologies. The product spectrum includes PSpice models for simulation support.

Replacement Considerations

Check for updated revisions within the HighSpeed 2 series. Verify pinout compatibility if substituting with other TO-220-3 IGBTs. Ensure equivalent voltage and current ratings are maintained for safe operation.

IKA03N120H2XKSA1IKA03N120H2XKSA1

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