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Product Detailed Parameters
- Description：IGBT 1200V 9.6A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：9.6 A
- Current - Collector Pulsed (Icm)：9.9 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
- Power - Max：62.5 W
- Switching Energy：290µJ
- Input Type：Standard
- Gate Charge：22 nC
- Td (on/off) @ 25°C：9.2ns/281ns
- Test Condition：800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The IKB03N120H2 is a HighSpeed 2-Technology IGBT with an integrated anti-parallel emitter-controlled HE diode, rated for 1200V collector-emitter voltage and 3A continuous collector current. It features optimized turn-off energy (Eoff) of 0.15mJ at IC=3A and operates up to a junction temperature of 150°C. The device utilizes PG-TO263-3-2 packaging and offers tight parameter distribution for parallel switching.
Feature Summary
- Second-generation HighSpeed Technology designed for resonant circuit loss reduction
- Integrated soft, fast recovery anti-parallel Emitter Controlled HE diode
- Temperature stable behavior with tight parameter distribution
- Qualified according to JEDEC2 standards
Applications
- Frequency inverters for washing machines
- Fan drives
- Pump systems
- Vacuum cleaners
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct package and tape/reel specifications. Confirm RoHS compliance and Pb-free lead plating status as stated in the datasheet. Check for any required written approval if intended for life-support or automotive applications.
Selection Notes
Select this component for high-frequency inverter applications requiring low switching losses and robust thermal performance. Ensure gate drive conditions match the specified VGE range and consider the internal emitter inductance for layout optimization. Verify that the operating frequency and current levels remain within the safe operating area limits defined in the datasheet.
Part Context
This part belongs to Infineon's HighSpeed 2 family for 1200V applications. It complements other devices like the IGB01N120H2ATMA1 in the same technology generation, offering similar performance characteristics tailored for compact power electronics designs in household appliances and industrial motor drives.
Replacement Considerations
Consult official Infineon substitution guides for direct replacements. Cross-reference electrical parameters such as VCES, IC, and Eoff when considering alternative manufacturers' parts to ensure compatibility with existing gate drive and thermal management designs.
