IKB20N60H3ATMA1

IKB20N60H3ATMA1

$2.60
  • Description:IGBT TRENCH FS 600V 40A TO263-3
  • Series:TrenchStop®

SKU:2e4eb9919e3a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 40A TO263-3
  • Series:TrenchStop®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 20A
  • Power - Max:170 W
  • Switching Energy:690µJ
  • Input Type:Standard
  • Gate Charge:120 nC
  • Td (on/off) @ 25°C:16ns/194ns
  • Test Condition:400V, 20A, 14.6Ohm, 15V
  • Reverse Recovery Time (trr):112 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3
  • Grade:-
  • Qualification:-

Download product information

IKB20N60H3ATMA1

Overview

The IKB20N60H3ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes Trench and Fieldstop technology for high-speed switching applications. The device features a collector-emitter voltage of 600V and a continuous collector current of 40A at 25°C case temperature. Key electrical parameters include a saturation voltage of 1.95V at 25°C and a maximum junction temperature of 175°C. It is housed in a PG-TO263-3 surface-mount package.

Feature Summary

  • TRENCHSTOP technology providing low saturation voltage and reduced electromagnetic interference
  • Integrated soft, fast-recovery anti-parallel diode for efficient commutation
  • Qualified according to JEDEC standards for industrial target applications
  • Lead-free plating compliant with RoHS directives

Applications

  • Uninterruptible power supplies
  • Welding converters
  • Converters with high switching frequency

Procurement Notes

Verify the specific ordering suffix ATMA1 against official documentation to confirm reel packaging and tape specifications. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Ensure thermal management designs account for the specified junction-to-case resistance values under varying load conditions.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within a 600V system. Evaluate the thermal performance based on the specific operating case temperature, as the continuous collector current decreases significantly at elevated temperatures. Consider the short-circuit withstand time when designing protection circuits for the power stage.

Part Context

This part belongs to the High-speed switching series third generation from Infineon. It is designed for industrial power control applications where efficiency and switching speed are critical. The device integrates both the IGBT switch and the freewheeling diode in a single compact package to simplify circuit layout and improve overall system reliability.

Replacement Considerations

IKB20N60H3

IKB20N60H3ATMA1IKB20N60H3ATMA1
$2.60
Buy Now