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The IKB20N60H3ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes Trench and Fieldstop technology for high-speed switching applications. The device features a collector-emitter voltage of 600V and a continuous collector current of 40A at 25°C case temperature. Key electrical parameters include a saturation voltage of 1.95V at 25°C and a maximum junction temperature of 175°C. It is housed in a PG-TO263-3 surface-mount package.
Verify the specific ordering suffix ATMA1 against official documentation to confirm reel packaging and tape specifications. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Ensure thermal management designs account for the specified junction-to-case resistance values under varying load conditions.
Select this component for designs requiring high-speed switching capabilities within a 600V system. Evaluate the thermal performance based on the specific operating case temperature, as the continuous collector current decreases significantly at elevated temperatures. Consider the short-circuit withstand time when designing protection circuits for the power stage.
This part belongs to the High-speed switching series third generation from Infineon. It is designed for industrial power control applications where efficiency and switching speed are critical. The device integrates both the IGBT switch and the freewheeling diode in a single compact package to simplify circuit layout and improve overall system reliability.
IKB20N60H3