IKB20N60TAATMA1

IKB20N60TAATMA1

  • Description:IGBT TRENCH FS 600V 40A TO263-3
  • Series:TrenchStop™

SKU:5f990be24b1f Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 40A TO263-3
  • Series:TrenchStop™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 20A
  • Power - Max:156 W
  • Switching Energy:310µJ (on), 460µJ (off)
  • Input Type:Standard
  • Gate Charge:120 nC
  • Td (on/off) @ 25°C:18ns/199ns
  • Test Condition:600V, 20A, 12Ohm, 15V
  • Reverse Recovery Time (trr):41 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3
  • Grade:-
  • Qualification:-

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IKB20N60TAATMA1

Overview

The IKB20N60TA is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TrenchStop series, utilizing Fieldstop technology. It features an integrated anti-parallel Emitter Controlled diode in a PG-TO263-3 package. Key electrical parameters include a collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. The typical saturation voltage is 1.5 V, with a maximum junction temperature of 150°C and a short-circuit withstand time of 5 µs.

Feature Summary

  • Automotive AEC-Q101 qualified for DC/AC converters
  • TrenchStop and Fieldstop technology for high ruggedness
  • Soft, fast recovery anti-parallel diode
  • Positive temperature coefficient in VCE(sat)

Applications

  • DC/AC converters for automotive applications

Procurement Notes

Verify the exact part number suffix against official documentation to confirm specific ordering variants or tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management designs account for the specified junction-to-case resistance values under expected operating conditions.

Selection Notes

Select this component for automotive power control circuits requiring high switching speed and low conduction losses. The positive temperature coefficient aids in parallel operation. Verify that the required gate drive voltage aligns with the specified 15V threshold and that the PCB footprint matches the PG-TO263-3 package dimensions.

Part Context

This device belongs to Infineon's third-generation Low Loss DuoPack series. It combines IGBT and Fieldstop technologies to offer tight parameter distribution and stable behavior across temperatures. The integrated diode eliminates the need for external freewheeling components in specific bridge configurations.

Replacement Considerations

IKB20N60TATMA1

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