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The IKB20N60TA is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TrenchStop series, utilizing Fieldstop technology. It features an integrated anti-parallel Emitter Controlled diode in a PG-TO263-3 package. Key electrical parameters include a collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C. The typical saturation voltage is 1.5 V, with a maximum junction temperature of 150°C and a short-circuit withstand time of 5 µs.
Verify the exact part number suffix against official documentation to confirm specific ordering variants or tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure thermal management designs account for the specified junction-to-case resistance values under expected operating conditions.
Select this component for automotive power control circuits requiring high switching speed and low conduction losses. The positive temperature coefficient aids in parallel operation. Verify that the required gate drive voltage aligns with the specified 15V threshold and that the PCB footprint matches the PG-TO263-3 package dimensions.
This device belongs to Infineon's third-generation Low Loss DuoPack series. It combines IGBT and Fieldstop technologies to offer tight parameter distribution and stable behavior across temperatures. The integrated diode eliminates the need for external freewheeling components in specific bridge configurations.
IKB20N60TATMA1