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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 74A TO263-3
- Series：TrenchStop™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：74 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
- Power - Max：250 W
- Switching Energy：1.1mJ (on), 400µJ (off)
- Input Type：Standard
- Gate Charge：95 nC
- Td (on/off) @ 25°C：20ns/157ns
- Test Condition：400V, 40A, 15Ohm, 15V
- Reverse Recovery Time (trr)：78 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3
- Grade：-
- Qualification：-
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Overview
The IKB40N65EH5ATMA1 is a single N-channel IGBT from Infineon's TRENCHSTOP™ 5 high-speed switching series, copacked with a full-rated current RAPID 1 anti-parallel diode. It features a PG-TO263-3 (D2PAK-3) surface-mount package. Key electrical parameters include a collector-emitter voltage of 650 V and a continuous collector current of 74 A at 25°C case temperature. The device exhibits a maximum collector-emitter saturation voltage of 1.65 V at 25°C and 40 A. Gate-emitter voltage limits are ±20 V for steady-state and ±30 V transiently. Power dissipation reaches 250 W at 25°C case temperature. Operating junction temperature ranges from -40°C to +175°C.
Feature Summary
- High-speed H5 technology optimized for best-in-class efficiency in hard-switching and resonant topologies
- Integrated full-rated current RAPID 1 fast anti-parallel diode
- Low gate charge for reduced switching losses
- Qualified for industrial applications according to JEDEC standards
Applications
- Solar String Inverter
- Industrial SMPS
- Welding
- Energy Storage
- Charger
Procurement Notes
Verify the specific ordering suffix ATMA1 against official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets RoHS compliance requirements and Pb-free lead plating standards. Confirm that the application environment does not exceed the absolute maximum ratings defined in the datasheet to maintain reliability.
Selection Notes
Select this component for designs requiring high-speed switching capabilities within the 650V class. The integrated RAPID 1 diode simplifies circuit design by eliminating the need for external freewheeling diodes. Consider thermal management strategies given the 175°C maximum junction temperature rating and the specific thermal resistance values provided for the PG-TO263-3 package.
Part Context
This part belongs to the TRENCHSTOP™ 5 family, representing the 5th generation of Infineon's trench field-stop IGBT technology. The 'H5' designation indicates high-speed switching characteristics suitable for frequencies above typical standard devices. The 'ATMA1' suffix typically denotes the specific tape-and-reel packaging configuration for automated assembly.
Replacement Considerations
Direct substitutes within the same package and electrical specification should be sought from the TRENCHSTOP™ 5 portfolio. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers. Cross-reference with other Infineon parts like AIKB40N65DH5ATMA1 if different switching speed profiles are required.
