IKD06N60RAATMA2

IKD06N60RAATMA2

$0.64
  • Description:IGBT
  • Series:*

SKU:8188ba1a3038 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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IKD06N60RAATMA2

Overview

The IKD06N60RAATMA2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, belonging to the TrenchStop RC series. It utilizes silicon technology and is housed in a TO-252-3 surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 12 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 100 W. The component operates within a temperature range of -40°C to +175°C.

Feature Summary

  • Incorporates TrenchStop RC technology for optimized switching performance.
  • Features an integrated anti-parallel diode for reverse conduction capabilities.
  • Designed for surface-mount installation via the TO-252-3 package.

Applications

  • High-frequency power conversion circuits
  • Motor drive systems requiring soft-switching characteristics
  • Industrial inverter topologies

Procurement Notes

Verify the current lifecycle status before procurement, as this specific part number may be marked as Not Recommended for New Design or End-of-Life. Confirm that the TO-252-3 package dimensions align with existing PCB footprints. Ensure that the 600V voltage rating and 12A current capacity meet the thermal and electrical requirements of the target application circuit design.

Selection Notes

Select this component when a single IGBT with an integrated freewheeling diode is required in a compact SMD form factor. The TrenchStop RC architecture is suitable for applications prioritizing reduced switching losses. Compare the 1.65 V saturation voltage against alternative devices to ensure efficiency targets are met within the specified 100 W power dissipation limit.

Part Context

This device is part of Infineon's broader TrenchStop family, which focuses on balancing conduction and switching losses. The IKD06N60RAATMA2 variant specifically integrates the diode function, distinguishing it from standard IGBTs like the IGD06N60T. It shares the TO-252-3 footprint with other discrete switches but offers distinct internal topology features defined by the RC series designation.

Replacement Considerations

Public documentation indicates the IKD06N60RATMA1 as a related variant within the same series. Verify pinout compatibility and exact electrical tolerances before substituting. No official cross-replacement list is provided; engineering validation is required for any alternative component integration.

IKD06N60RAATMA2IKD06N60RAATMA2
$0.64
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