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The IKD08N65ET6 is a TRENCHSTOP™ IGBT6 device in trench and field-stop technology, featuring a soft, fast recovery anti-parallel Rapid diode. It operates at 650 V with an 8 A collector current rating. The component supports a maximum junction temperature of 175°C and includes a short circuit withstand time of 3 µs. Packaged in PG-TO252-3, it offers low saturation voltage and positive temperature coefficient behavior.
Verify the specific ordering suffix ARMA1 against official Infineon documentation to confirm package marking and reel specifications. Ensure compliance with JEDEC47/20/22 industrial qualification standards required for target applications. Confirm RoHS compliance and lead-free plating status prior to integration.
Select this component for 650V applications requiring low saturation voltage and high thermal stability up to 175°C. Consider the PG-TO252-3 package constraints for PCB layout and thermal management. Evaluate gate charge requirements against driver capabilities for optimal switching performance.
This part belongs to the TRENCHSTOP™ IGBT6 family, utilizing advanced trench and field-stop technology. It is designed for robust industrial performance with optimized switching characteristics and thermal resistance profiles suitable for discrete power conversion modules.
Consult official Infineon cross-reference guides for verified substitutes. Verify pinout compatibility and electrical parameters before substituting with other IGBT models.
The maximum short circuit withstand time is 3 µs at a junction temperature of 150°C.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
It uses the PG-TO252-3 package.