IKD15N60RAATMA1

$0.96

Description：IGBT TRENCH 600V 30A TO252-3
Series：TrenchStop®

SKU:2eed4124d9bc Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 30A TO252-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 15A
Power - Max：250 W
Switching Energy：-
Input Type：Standard
Gate Charge：90 nC
Td (on/off) @ 25°C：16ns/183ns
Test Condition：400V, 15A, 15Ohm, 15V
Reverse Recovery Time (trr)：110 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：PG-TO252-3
Grade：-
Qualification：-

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IKD15N60RAATMA1

Overview

The IKD15N60RAATMA1 is a 600 V reverse conducting IGBT from Infineon Technologies, integrating an N-channel IGBT and a fast recovery diode in a single TO-252-3 (DPAK) package. It supports a continuous collector current of 30 A at 25°C and 18.6 A at 100°C, with a peak pulse current of 45 A. The device features a saturated collector-emitter voltage of 2 V and a forward diode voltage of 1.9 V. Switching characteristics include an off-state energy of 0.04 mJ and an on-state energy of 0.57 mJ under hard switching conditions. It operates within a junction temperature range of -40°C to 175°C.

Feature Summary

Integrates a high-speed IGBT switch with a complementary fast recovery anti-parallel diode for simplified circuit design.
Utilizes TRENCHSTOP™ technology to achieve low conduction losses and optimized switching performance.
Designed for robust operation with a maximum junction temperature rating of 175°C.

Applications

High-frequency power conversion circuits
Motor drive inverters
Uninterruptible power supplies (UPS)
Induction heating systems

Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging and automotive-grade qualification status. Confirm that the DPAK footprint matches the target PCB layout dimensions. Cross-reference the specific datasheet revision to validate thermal resistance values against the intended heatsinking strategy. Ensure compatibility with gate drive voltage levels specified in the official electrical characteristics table.

Selection Notes

Select this component when a compact solution combining switching and freewheeling functions is required. The integrated diode eliminates the need for external parallel components, reducing board space. Consider the 600 V blocking capability and 30 A current rating relative to the system's peak load requirements. Evaluate the switching energy parameters against the available gate resistor options to balance EMI and efficiency.

Part Context

This device belongs to Infineon’s family of reverse conducting IGBTs, which merge IGBT and diode functionalities into one package. It utilizes TRENCHSTOP™ technology for improved efficiency compared to standard planar designs. The TO-252-3 package provides a balance between thermal performance and surface-mount convenience for medium-power applications.

Replacement Considerations

Direct pin-compatible alternatives within the same series include IKD15N60RC2 and IKD15N60RF. Verify that substitute parts meet the same voltage, current, and thermal specifications before implementation.