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The IKFW50N65EH5 is a high-speed IGBT in TRENCHSTOP 5 technology, copacked with a full current rated RAPID 1 fast and soft antiparallel diode. It features a fully isolated PG-HSIP247-3-2 package providing 2500 Vrms electrical isolation. Key parameters include a collector-emitter voltage of 650 V, a DC collector current of 40 A at Th=25°C, and a saturation voltage of 1.65 V at Tvj=25°C. The device supports a maximum junction temperature of 175°C and offers best-in-class efficiency for hard switching and resonant topologies.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead times and availability status. Ensure the procurement channel sources genuine components qualified for industrial applications according to JEDEC standards. Confirm that the delivered units match the PG-HSIP247-3-2 package marking K50EEH5 to prevent counterfeit substitution.
Select this component when high-voltage isolation is required within a single package footprint. The 650V rating and 40A continuous current capability suit mid-power industrial applications. Consider the thermal resistance values (Rth(j-h) max 1.21 K/W for IGBT) for heatsink design. Verify gate drive requirements against the specified VGE limits and internal emitter inductance characteristics.
This device belongs to the TRENCHSTOP 5 Advanced Isolation family from Infineon Technologies. It combines an IGBT chip with a RAPID 1 diode in a specialized TO-247 variant package. The series targets industrial power conversion where space constraints and electrical safety isolation are critical design factors.
Officially documented as a plug-and-play replacement for previous generation IGBTs. No specific substitute part numbers are listed in the provided datasheet.