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The IKI04N60TXKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and belongs to the TRENCHSTOP family, designed for switching frequencies ranging from 2 kHz to 20 kHz. The device features a built-in anti-parallel diode and is housed in a TO-262-3 (I2PAK) surface-mount package with long leads. Key electrical specifications include a maximum collector-emitter voltage of 600 V and a continuous collector current of 8 A at 25°C. The saturation voltage is specified at 1.5 V, with a power dissipation capacity of 42 W. Operating temperatures range from -40°C to +175°C.
Verify the specific ordering suffix and tape-and-reel or tube packaging configuration directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-262-3 package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions are adequate for the 42 W power dissipation rating under expected operating conditions. Check for any recent lifecycle status updates regarding availability or recommended alternatives.
Select this component when a 600 V IGBT with integrated freewheeling diode is required for applications operating between 2 kHz and 20 kHz. The 8 A continuous current rating suits moderate power levels where surface-mount mounting is preferred over through-hole options. Consider the 1.5 V saturation voltage for efficiency calculations in low-to-medium power conversion circuits. Evaluate thermal resistance characteristics against the ambient temperature constraints of the final enclosure design.
This part belongs to Infineon's TRENCHSTOP IGBT series, which employs trench gate technology to achieve lower on-state voltage drops and improved switching characteristics compared to older planar designs. The IKI prefix typically denotes an IGBT chip with an integrated diode in a specific package format. This series is engineered for cost-effective solutions in consumer and industrial electronics requiring reliable high-voltage switching capabilities.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon cross-reference guides for potential equivalents based on voltage, current, and package compatibility.
The device is designed for switching frequencies ranging from 2 kHz to 20 kHz.
Yes, the component features a built-in anti-parallel diode.