IKP01N120H2XKSA1

$1.37

Description：IGBT 1200V 3.2A TO220-3
Series：-

SKU:dc2961d5bbdd Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 3.2A TO220-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：3.2 A
Current - Collector Pulsed (Icm)：3.5 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 1A
Power - Max：28 W
Switching Energy：140µJ
Input Type：Standard
Gate Charge：8.6 nC
Td (on/off) @ 25°C：13ns/370ns
Test Condition：800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)：83 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：PG-TO220-3-1
Grade：-
Qualification：-

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IKP01N120H2XKSA1

Overview

The IKP01N120H2 is a HighSpeed 2 IGBT from Infineon Technologies, rated at 1200V collector-emitter voltage and 1A continuous collector current. It features an integrated EmCon HE anti-parallel diode with soft, fast recovery characteristics. The device operates up to a maximum junction temperature of 150°C and utilizes the PG-TO-220-3-1 package.

Feature Summary

Second-generation HighSpeed technology optimized for resonant topologies and soft-switching applications
Integrated EmCon HE diode providing soft, fast recovery behavior
Temperature-stable operation with tight parameter distribution
Capable of parallel switching

Applications

Switched-mode power supplies (SMPS)
Lamp ballasts
Zero-voltage switching (ZVS) converters

Procurement Notes

Verify component authenticity by matching the datasheet revision number and date against official Infineon documentation. Confirm that the ordering suffix corresponds to the specified lead plating and RoHS compliance status. Ensure storage conditions adhere to JEDEC standards to maintain device integrity prior to assembly.

Selection Notes

Select this component for designs requiring low turn-off energy in resonant circuits. Evaluate thermal resistance values against the expected case temperature to ensure safe operating area limits are not exceeded. Consider the specific gate resistor requirements to optimize switching times and minimize electromagnetic interference during operation.

Part Context

This part belongs to Infineon's HighSpeed 2 product family, designed specifically for high-frequency power conversion. It serves as a discrete solution for medium-power applications where efficient switching and robust diode performance are critical. The technology aims to reduce losses compared to previous generations while maintaining reliability.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume compatibility based on similar voltage or current ratings alone. Verify pinout and thermal characteristics before attempting any substitution.