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The IKP04N60TXKSA1 is a 600 V, 4 A IGBT discrete device with an integrated anti-parallel diode in a PG-TO220-3 package. It utilizes TRENCHSTOPTM and Fieldstop technology for low loss performance. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V at 25°C, a maximum junction temperature of 175°C, and a short circuit withstand time of 5 µs. The gate charge is 27 nC, and the total switching energy is 145 µJ under standard test conditions.
Verify the exact ordering suffix against Infineon's official documentation to confirm specific marking or packaging variations. Ensure compliance with JEDEC standards for target applications. Confirm RoHS compliance and Pb-free lead plating status through current datasheets before procurement.
Select this component for 600V applications requiring low conduction losses and high switching speeds. Consider the 175°C maximum junction temperature for thermal management. Evaluate the 5 µs short circuit withstand capability for robust protection schemes. Verify compatibility with the PG-TO220-3 footprint during PCB design.
This part belongs to the TRENCHSTOPTM Series q from Infineon Technologies. It is designed specifically for 600V power electronics applications. The series emphasizes low loss performance through advanced silicon technologies, offering improved efficiency compared to standard IGBTs in similar voltage classes.
IKP04N60T
The maximum short circuit withstand time is 5 µs.
Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled HE diode.
The typical VCE(sat) is 1.5 V at Tj=25°C.