IKP04N60TXKSA1

IKP04N60TXKSA1

$1.79
  • Description:IGBT TRENCH FS 600V 8A TO220-3
  • Series:TrenchStop®

SKU:644b81902f8e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 8A TO220-3
  • Series:TrenchStop®
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):8:00 AM
  • Current - Collector Pulsed (Icm):12:00 AM
  • Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 4A
  • Power - Max:42 W
  • Switching Energy:143µJ
  • Input Type:Standard
  • Gate Charge:27 nC
  • Td (on/off) @ 25°C:14ns/164ns
  • Test Condition:400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr):28 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3-1
  • Grade:-
  • Qualification:-

Download product information

IKP04N60TXKSA1

Overview

The IKP04N60TXKSA1 is a 600 V, 4 A IGBT discrete device with an integrated anti-parallel diode in a PG-TO220-3 package. It utilizes TRENCHSTOPTM and Fieldstop technology for low loss performance. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V at 25°C, a maximum junction temperature of 175°C, and a short circuit withstand time of 5 µs. The gate charge is 27 nC, and the total switching energy is 145 µJ under standard test conditions.

Feature Summary

  • TRENCHSTOPTM and Fieldstop technology providing high ruggedness and tight parameter distribution
  • Soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Positive temperature coefficient in VCE(sat) for parallel operation stability
  • Low EMI and low gate charge characteristics

Applications

  • Frequency Converters
  • Drives

Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to confirm specific marking or packaging variations. Ensure compliance with JEDEC standards for target applications. Confirm RoHS compliance and Pb-free lead plating status through current datasheets before procurement.

Selection Notes

Select this component for 600V applications requiring low conduction losses and high switching speeds. Consider the 175°C maximum junction temperature for thermal management. Evaluate the 5 µs short circuit withstand capability for robust protection schemes. Verify compatibility with the PG-TO220-3 footprint during PCB design.

Part Context

This part belongs to the TRENCHSTOPTM Series q from Infineon Technologies. It is designed specifically for 600V power electronics applications. The series emphasizes low loss performance through advanced silicon technologies, offering improved efficiency compared to standard IGBTs in similar voltage classes.

Replacement Considerations

IKP04N60T

FAQ

What is the maximum short circuit withstand time?

The maximum short circuit withstand time is 5 µs.

Does the device have an integrated diode?

Yes, it includes a soft, fast recovery anti-parallel Emitter Controlled HE diode.

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 1.5 V at Tj=25°C.

IKP04N60TXKSA1IKP04N60TXKSA1
$1.79
Buy Now